IEICE Technical Report

Print edition: ISSN 0913-5685      Online edition: ISSN 2432-6380

Volume 116, Number 48

Electron Device

Workshop Date : 2016-05-19 - 2016-05-20 / Issue Date : 2016-05-12

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Table of contents

ED2016-13
Fabrication of CVD single-layer graphene diaphragm above a nano cavity by dry transfer technique
Hayato Ishida, Makoto Ishida (Toyohashi Tech.), Kazuaki Sawada, Kazuhiro Takahashi (Toyohashi Tech./EIIRIS)
pp. 1 - 4

ED2016-14
Synthesis of graphenes on metal alloy substrates by thermal chemical vapor deposition
Naoki Kishi, Kazuki Iwama, Takuya Mizutani, Shinya Kato, Tetsuo Soga (NITech)
pp. 5 - 8

ED2016-15
ZnO nanostructures for the fabrication of photoanode towards energy applications
Mani Navaneethan, Jayaram Archana, Santhana Harish, Tadanobu Koyama, Hiroya Ikeda, Yasuhiro Hayakawa (Shizuoka Univ.)
pp. 9 - 14

ED2016-16
Thermoelectric characteristics of flexible material with ZnO nanostructures
Masaya Wanami, Selvaraj Shanthi, Yuhei Suzuki, Veluswamy Pandiyarasan (Shizuoka Univ.), Faiz Salleh (Univ. Malaya), Masaru Shimomura, Kenji Murakami, Hiroya Ikeda (Shizuoka Univ.)
pp. 15 - 18

ED2016-17
Investigation of interface formation process between insulator and nitride-semiconductor for insulated gate transistors
Yutaka Kondo, Masatoshi Shinohara, Tomoki Hikosaka, Makoto Baba (Toyohashi Univ. Technol.), Hiroshi Okada (EIIRIS, Toyohashi Univ. Technol.), Hiroto Sekiguchi, Keisuke Yamane, Akihiro Wakahara (Toyohashi Univ. Technol.)
pp. 19 - 23

ED2016-18
Rectenna circuits with diamond Schottky barrier diodes
Naoto Kawano, Makoto Kasu, Toshiyuki Oishi (Saga Univ.)
pp. 25 - 28

ED2016-19
Fabrication of a thin plasmonic color sheet embedded with Al subwavelength gratings in parylene
Hayato Kumagai (Toyohashi Univ.), Hiroaki Honma (Toyohashi Univ./JSPS), Makoto Ishida, Kazuaki Sawada (Toyohashi Univ./EIIRIS), Kazuhiro Takahashi (Toyohashi Univ.)
pp. 29 - 34

ED2016-20
Fabrication of magnetophotonic crystal having cerium substituted yttrium iron garnet for using at near-infrared wavelength
Takuya Yoshimoto, Taichi Goto, Hiroyuki Takagi, Yuichi Nakamaura, Hironaga Uchida, Mitsuteru Inoue (TUT)
pp. 35 - 38

ED2016-21
Chemical solution deposition of SnS thin films using EDTA as complexing agent
Yusaku Kanda, Yasushi Takano, Akihiro Ishida (Shizuoka Univ.)
pp. 39 - 42

ED2016-22
Annealing of p-type wide-gap CuxZnyS thin films deposited by the photochemical deposition method
Bayingaerdi Tong, Masaya Ichimura (NITech)
pp. 43 - 46

ED2016-23
Evaluation of electrical properties of HfS2 thin flakes obtained by mechanical exfoliation
Vikrant Upadhyaya, Toru Kanazawa, Yasuyuki Miyamoto (TokyoTech)
pp. 47 - 50

ED2016-24
Heteroepitaxial Growth of GaSb Films on Si(111)-√3x√3-Ga Surface Phase
Hiroya Shimoyama, Masayuki Mori, Koichi Maezawa (Univ. of Toyama)
pp. 51 - 54

ED2016-25
Gravity effect on the properties of InxGa1-xSb ternary alloys grown at the International Space Station
Velu NirmalKumar (Shizuoka Univ), Mukannan Arivanandhan (Anna Univ), Govindasamy Rajesh, Tadanobu Koyama, Yoshimi Momose (Shizuoka Univ), Kaoruho Sakata (Univ.Tokyo), Tetsuo Ozawa (Shizuoka Insti.Sci.&Tech.), Yasunori Okano (OsakaUniv.), Yuko Inatomi (JAXA), Yasuhiro Hayakawa (Shizuoka Univ)
pp. 55 - 59

ED2016-26
Interface control for III-V/Si hetero-epitaxy
Keisuke Yamane, Hiroto Sekiguchi (Toyohashi Tech.), Hiroshi Okada (EIIRIS), Akihiro Wakahara (Toyohashi Tech.)
pp. 61 - 65

Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.


The Institute of Electronics, Information and Communication Engineers (IEICE), Japan