Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380
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MR2017-11
Enhancement of L10 Ordering and Structural Analysis of Electrodeposited FePt Nanodot Arrays
Mana Kambe, Siggi Wodarz, Shogo Hashimoto (Waseda Univ.), Giovanni Zangari (UVA), Takayuki Homma (Waseda Univ.)
pp. 1 - 5
MR2017-12
Co2FeSi/Mn3Ge bilayered films with perpendicular magnetic anisotropy for magnetic tunnel junction
Taishi Yabushita, Naoki Matsushita, Yota Takamura (Tokyo Inst. of Tech.), Yoshiaki Sonobe (Samsung R&D Institute Japan), Shigeki Nakagawa (Tokyo Inst. of Tech.)
pp. 7 - 12
MR2017-13
Fabrication and evaluation of SmFe2 thin film with negative giant magnetostriction for low consumption magnetic tunnel junction
Masato Tomita, Yugo Ishitani, Yota Takamura, Shigeki Nakagawa (Tokyo Inst. of Tech.)
pp. 13 - 18
MR2017-14
Numerical analysis on resonance properties of nanodots with antiferromagnetic coupled structure
Xiaorui Ya, Mao Fukuzono, Terumitsu Tanaka, Kimihide Matsuyama (Kyushu Univ.)
pp. 19 - 23
MR2017-15
Analysis of Holographic Scattering in Holographic Data Storage Recording Media
Takeru Utsugi (HLDS)
pp. 31 - 36
MR2017-16
Voltage-Control Spintronics Memory (VoCSM)
Altansargai Buyandalai, Hiroaki Yoda, Mariko Shimizu, Tomoaki Inokuchi, Yuichi Ohsawa, Naoharu Shimomura, Satoshi Shirotori, Hideyurki Sugiyama, Yushi Kato, Yuuzo Kamiguchi, Katsuhiko Koi, Soichi Oikawa, Mizue Ishikawa, Yoshiaki Saito, Atsushi Kurobe (Toshiba Corp.)
pp. 37 - 40
Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.