IEICE Technical Report

Print edition: ISSN 0913-5685      Online edition: ISSN 2432-6380

Volume 117, Number 58

Electron Devices

Workshop Date : 2017-05-25 - 2017-05-26 / Issue Date : 2017-05-18

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Table of contents

ED2017-15
Fabrication and characterization of flexible organic thin film solar cells for indoor light harvesting
Yusuke Kawamatsu, Mizuki Ito, Shinya Kato, Tetsuo Soga, Naoki Kishi (NITech)
pp. 1 - 5

ED2017-16
Study on thermal evaporation of tin sulfide films in vacuum
Yasushi Takano, Yukio Suganuma (Shizuoka Univ.)
pp. 7 - 10

ED2017-17
Fabrication of NiO thin film by electrochemical deposition
Miki Koyama, Masaya Ichimura (NITech)
pp. 11 - 16

ED2017-18
Fabrication of n-type AlOx thin films by drop photochemical deposition
Masanari Umemura, Masaya Ichimura (NITech)
pp. 17 - 22

ED2017-19
Electrochemical deposition of Cu-doped p-type Fe-O thin films
Satoshi Kobayashi, Masaya Ichimura (NITech)
pp. 23 - 28

ED2017-20
Development of Plasmonic Logical Circuit Using Multimode Interference
Ryo Watanabe, Masashi Ota, Yudai Kikuchi, Tomohiro Hirano, Yuya Ishii, Mitsuo Fukuda (TUT)
pp. 29 - 32

ED2017-21
Development of plasmonic retention circuit using bow-tied metallic waveguide
Takahiro Furuki, Masashi Ota, Yuya Ishii, Mitsuo Fukuda (TUT)
pp. 33 - 37

ED2017-22
Development of plasmonic multiplexer/demultiplexer and inverter
Kotaro Nakayama, Asahi Sumimura, Yuta Tonooka, Masashi Ota, Yuya Ishii, Mitsuo Fukuda (TUT)
pp. 39 - 44

ED2017-23
Heteroepitaxial Growth of InGaSb Thin Films on GaSb/Si(111)-√3×√3-Ga Surface Phase
Md.Monzur-ul-akhir, Masayuki Mori, Hiroya Shimoyama, Koichi Maezawa (Univ. of Toyama)
pp. 45 - 49

ED2017-24
Suppression of surface recombination at the 4H-SiC (0001) Si-face by immersing aqueous solutions
Masashi Kato, Yoshihito Ichikawa, Masaya Ichimura (NITech), Tsunenobu Kimoto (Kyoto Univ.)
pp. 51 - 54

ED2017-25
Characterization of GaN epilayers grown on GaN substrates by a microwave photoconductivity decay method
Takato Asada (N.I.Tech), Yoshihito Ichikawa (NITech), Kenji Ito, Kazuyoshi Tomita, Tetsuo Narita (Toyota Central R&D Labs.), Tetsu Kachi (Nagoya Univ.), Masashi Kato (NITech)
pp. 55 - 58

ED2017-26
N-polar GaN MIS-HEMTs with Flat Interface Grown by Optimized MOVPE
Kiattiwut Prasertsuk, Tomoyuki Tanikawa, Takeshi Kimura, Shigeyuki Kuboya, Tetsuya Suemitsu, Takashi Matsuoka (Tohoku Univ.)
pp. 59 - 64

Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.


The Institute of Electronics, Information and Communication Engineers (IEICE), Japan