Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380
[TOP] | [2014] | [2015] | [2016] | [2017] | [2018] | [2019] | [2020] | [Japanese] / [English]
SDM2017-9
Fabrication and characterization of flexible organic thin film solar cells for indoor light harvesting
Yusuke Kawamatsu, Mizuki Ito, Shinya Kato, Tetsuo Soga, Naoki Kishi (NITech)
pp. 1 - 5
SDM2017-10
Study on thermal evaporation of tin sulfide films in vacuum
Yasushi Takano, Yukio Suganuma (Shizuoka Univ.)
pp. 7 - 10
SDM2017-11
Fabrication of NiO thin film by electrochemical deposition
Miki Koyama, Masaya Ichimura (NITech)
pp. 11 - 16
SDM2017-12
Fabrication of n-type AlOx thin films by drop photochemical deposition
Masanari Umemura, Masaya Ichimura (NITech)
pp. 17 - 22
SDM2017-13
Electrochemical deposition of Cu-doped p-type Fe-O thin films
Satoshi Kobayashi, Masaya Ichimura (NITech)
pp. 23 - 28
SDM2017-14
Development of Plasmonic Logical Circuit Using Multimode Interference
Ryo Watanabe, Masashi Ota, Yudai Kikuchi, Tomohiro Hirano, Yuya Ishii, Mitsuo Fukuda (TUT)
pp. 29 - 32
SDM2017-15
Development of plasmonic retention circuit using bow-tied metallic waveguide
Takahiro Furuki, Masashi Ota, Yuya Ishii, Mitsuo Fukuda (TUT)
pp. 33 - 37
SDM2017-16
Development of plasmonic multiplexer/demultiplexer and inverter
Kotaro Nakayama, Asahi Sumimura, Yuta Tonooka, Masashi Ota, Yuya Ishii, Mitsuo Fukuda (TUT)
pp. 39 - 44
SDM2017-17
Heteroepitaxial Growth of InGaSb Thin Films on GaSb/Si(111)-√3×√3-Ga Surface Phase
Md.Monzur-ul-akhir, Masayuki Mori, Hiroya Shimoyama, Koichi Maezawa (Univ. of Toyama)
pp. 45 - 49
SDM2017-18
Suppression of surface recombination at the 4H-SiC (0001) Si-face by immersing aqueous solutions
Masashi Kato, Yoshihito Ichikawa, Masaya Ichimura (NITech), Tsunenobu Kimoto (Kyoto Univ.)
pp. 51 - 54
SDM2017-19
Characterization of GaN epilayers grown on GaN substrates by a microwave photoconductivity decay method
Takato Asada (N.I.Tech), Yoshihito Ichikawa (NITech), Kenji Ito, Kazuyoshi Tomita, Tetsuo Narita (Toyota Central R&D Labs.), Tetsu Kachi (Nagoya Univ.), Masashi Kato (NITech)
pp. 55 - 58
SDM2017-20
N-polar GaN MIS-HEMTs with Flat Interface Grown by Optimized MOVPE
Kiattiwut Prasertsuk, Tomoyuki Tanikawa, Takeshi Kimura, Shigeyuki Kuboya, Tetsuya Suemitsu, Takashi Matsuoka (Tohoku Univ.)
pp. 59 - 64
Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.