Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380
[TOP] | [2015] | [2016] | [2017] | [2018] | [2019] | [2020] | [2021] | [Japanese] / [English]
EID2018-4
Double-Gate Cu-MIC Poly-Ge TFT on Plastic Substrate
Hiroki Utsumi (Tohoku Gakuin Univ.), Kuninori Kitahara, Shinya Tsukada (Shimane Univ.), Hitoshi Suzuki, Akito Hara (Tohoku Gakuin Univ.)
pp. 1 - 4
EID2018-5
Effects of SiOx Capping Film on Crystallization of Ge Film for Flash Lamp Annealing (Ⅱ)
Yoshiki akita, Naoto Matsuo (Univ. of Hyogo), Kazuyuki Kohama, Kazuhiro Ito (Osaka Univ.)
pp. 17 - 20
EID2018-6
Effect of atomic hydrogen annealing on AlOx/GeOx/a-Ge stack structure fabricated in O2 ambient
Tomofumi Onuki, Akira Heya, Naoto Matsuo (Univ. Hyogo)
pp. 21 - 24
EID2018-7
Study for hole- or electron- conduction of DNA/Si-MOSFET
Hibiki Nakano, Naoto Mastuo, Akira Heya, Kazushige Yamana, Tadao Takada, Kousuke Moritani, Norio Inui, Yu Sato (Univ. Hyogo), Tadashi Sato, Shin Yokoyama (Hiroshima Univ.)
pp. 25 - 28
Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.