IEICE Technical Report

Print edition: ISSN 0913-5685      Online edition: ISSN 2432-6380

Volume 118, Number 380

Silicon Device and Materials

Workshop Date : 2018-12-25 / Issue Date : 2018-12-18

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Table of contents

SDM2018-77
Double-Gate Cu-MIC Poly-Ge TFT on Plastic Substrate
Hiroki Utsumi (Tohoku Gakuin Univ.), Kuninori Kitahara, Shinya Tsukada (Shimane Univ.), Hitoshi Suzuki, Akito Hara (Tohoku Gakuin Univ.)
pp. 1 - 4

SDM2018-78
Effects of SiOx Capping Film on Crystallization of Ge Film for Flash Lamp Annealing (Ⅱ)
Yoshiki akita, Naoto Matsuo (Univ. of Hyogo), Kazuyuki Kohama, Kazuhiro Ito (Osaka Univ.)
pp. 17 - 20

SDM2018-79
Effect of atomic hydrogen annealing on AlOx/GeOx/a-Ge stack structure fabricated in O2 ambient
Tomofumi Onuki, Akira Heya, Naoto Matsuo (Univ. Hyogo)
pp. 21 - 24

SDM2018-80
Study for hole- or electron- conduction of DNA/Si-MOSFET
Hibiki Nakano, Naoto Mastuo, Akira Heya, Kazushige Yamana, Tadao Takada, Kousuke Moritani, Norio Inui, Yu Sato (Univ. Hyogo), Tadashi Sato, Shin Yokoyama (Hiroshima Univ.)
pp. 25 - 28

Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.

The Institute of Electronics, Information and Communication Engineers (IEICE), Japan