IEICE Technical Report

Print edition: ISSN 0913-5685      Online edition: ISSN 2432-6380

Volume 118, Number 58

Electron Devices

Workshop Date : 2018-05-24 / Issue Date : 2018-05-17

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Table of contents

ED2018-14
Fabrication and characterization of flexible organic thermoelectric materials
Naoki Kishi, Satoshi Hibi, Yuta Yoshida, Keisuke Ono, Yuma Sawada, Hiroki Kunieda, Yuya Kondo (NITech)
pp. 1 - 3

ED2018-15
Fabrication of Cu-O Thin Films by Galvanostatic Electrochemical Deposition from Weakly Acidic Solutions
mansoureh keikhaei, Masaya Ichimura (NIT)
pp. 5 - 10

ED2018-16
MEMS bio sensor using suspended graphene fabricated by low-pressure dry transfer technique
Shin Kidane, Hayato Ishida, Kazuaki Sawada (Toyohashi Univ. of Technol.), Kazuhiro Takahashi (Toyohashi Univ. of Technol./JST-PRESTO)
pp. 11 - 14

ED2018-17
Growth of high quality InSb channel layer with InxGa1-xSb heteroepitaxial films on Si(111)
A. A. Mohammad Monzur-Ul-Akhir, Masayuki Mori, Koichi Maezawa (University of Toyama)
pp. 15 - 18

ED2018-18
The characterization of GaN homo-epitaxial layers grown on GaN substrates by using FT-IR
Fumimasa Horikiri, Yoshinobu Narita, Takehiro Yoshida (Sciocs)
pp. 19 - 22

ED2018-19
Temperature dependence of hydrogen-related donor in FZ-Silicon
Akira Kiyoi, Katsumi Nakamura (Mitsubishi Electric Corp.)
pp. 23 - 28

ED2018-20
Reduction of threading dislocation density in Ge layers on Si by introducing tunnel-shaped voids
Motoki Yako (Univ. of Tokyo), Yasuhiko Ishikawa (Toyohashi Univ. of Tech.), Kazumi Wada (Massachusetts Inst. Tech.)
pp. 29 - 32

Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.


The Institute of Electronics, Information and Communication Engineers (IEICE), Japan