IEICE Technical Report

Online edition: ISSN 2432-6380

Silicon Device and Materials

Workshop Date : 2021-10-21 / Issue Date : 2021-10-14

SDM2021-44
[Invited Talk] Influence of Fluorine on Reliabilities of SiO2 and SixNy Films
Yuichiro Mitani (Tokyo City Univ.)
pp. 1 - 4

SDM2021-45
Characterization of Gallium Oxide Thin Film Deposited by Sputtering Method
Fuminobu Imaizumi (NIT, Oyama college)
pp. 5 - 7

SDM2021-46
A study on Ar/N2-plasma sputtering gas pressure dependence on the LaBxNy insulator formation for non-volatile memory applications
Eun-Ki Hong, Shun-ichiro Ohmi (Tokyo Tech.)
pp. 8 - 11

SDM2021-47
A study on the effect of inter layers on ferroelectric nondoped HfO2 formation
Masakazu Tanuma, Joong-Won Shin, Shun-ichiro Ohmi (Tokyo Tech.)
pp. 12 - 15

SDM2021-48
A study on Hf-based MONOS nonvolatile memory with HfO2 and HfON tunneling layers for multi-bit/cell operation
Pyo Jooyoung, Ihara Akio, Ohmi Shun-ichiro (Tokyo Tech.)
pp. 16 - 19

SDM2021-49
[Invited Talk] Device and Integration Technologies Realizing Silicon Quantum Computers
Takahiro Mori (AIST)
p. 20

SDM2021-50
Highly sensitive TMR sensor and its application to bio-magnetic field measurement
Mikihiko Oogane (Tohoku Univ.)
pp. 21 - 22

SDM2021-51
Current Measurement Platform Applied for Statistical Measurement of Discharge Current due to Traps in SiN Dielectrics
Koga Saito, Hayato Suzuki, Hyeonwoo Park, Rihito Kuroda (Tohoku Univ.), Akinobu Teramoto (Hiroshima Univ.), Tomoyuki Suwa, Shigetoshi Sugawa (Tohoku Univ.)
pp. 23 - 26

SDM2021-52
Statistical analysis of RTN behavior on transistor structure, operating region, and carrier transport direction
Ryo Akimoto, Rihito Kuroda, Takezo Mawaki, Shigotoshi Sugawa (Tohoku Univ.)
pp. 27 - 32

Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.

The Institute of Electronics, Information and Communication Engineers (IEICE), Japan