IEICE Technical Report

Online edition: ISSN 2432-6380

Electron Devices

Workshop Date : 2023-01-27 / Issue Date : 2023-01-20

ED2022-86
A Calibration method for RF Spectrum Regeneration Using Direct RF Undersampling at Different Sampling Frequency Multi-path
Takashi Shiba, Tomoyuki Furuichi, Noriharu Suematsu (Tohoku Univ.)
pp. 1 - 6

ED2022-87
Design of Parasitic-Element Loaded Wideband Filtering Antenna with Unidirectional Radiation Pattern over 30% Frequency Bandwidth
Ken Sakiyama, Masataka Ohira, Zhewang Ma (Saitama Univ.)
pp. 7 - 12

ED2022-88
A Reinforcement Learning Approach Enabling Automatic Microstrip BPF Design for Multiple Specifications
Yuto Asai, Masataka Ohira, Zhewang Ma (Saitama Univ.)
pp. 13 - 18

ED2022-89
Measurement Evaluation of Bias Dependence of Single-Input Broadband GaN Amplifier
Yuki Nakagawa, Takana Kaho (Shonan Inst. Tech.), Shuichi Sakata, Yuji Komatsuzaki, Koji Yamanaka (MELCO)
pp. 19 - 24

ED2022-90
Over 670 W output X-band IMFET Using non-Uniform Comb Lines for Stabilization
Eigo Kuwata, Takumi Sugitani, Takashi Yamasaki, Yoshitaka Kamo, Shintaro Shinjo (MELCO)
pp. 25 - 28

ED2022-91
Effects of GaN traps in GaN HEMTs to Low Frequency Y22 Parameters -- Device Simulation Study --
Shogo Morokuma (Saga Univ.), Tomohiro Otsuka (Mitsubishi Electric), Toshiyuki Oishi (Saga Univ.), Yutaro Yamaguchi, Shintaro Shinjo, Koji Yamanaka (Mitsubishi Electric)
pp. 29 - 32

ED2022-92
(See Japanese page.)
pp. 33 - 35

ED2022-93
Demonstration of high current and high voltage E-mode operation in EID AlGaN/GaN MOS-HEMT
Takuma Nanjo, Tomohiro Shinagawa, Tatsuro Watahiki, Naruhisa Miura, Masayuki Furuhashi, Kazuyasu Nishikawa (Mitsubishi Electric), Takashi Egawa (NITech)
pp. 36 - 39

ED2022-94
Challenges and Potential of N-polar GaN HEMT for beyond 5G Wireless Network
Shigeki Yoshida, Kozo Makiyama, Akihiro Hayasaka, Isao Makabe, Ken Nakata (SEI)
pp. 40 - 43

ED2022-95
[Invited Talk] Circuits and devices technology of GaN power amplifiers for microwave and millimeter-wave application
Koji Matsunaga (SIT)
pp. 44 - 49

ED2022-96
[Invited Talk] Requierements for sharing type 4G/5G base station transciever amplifiers
Koji Yamanaka, Yuji Komatsuzaki, Shuichi Sakata, Kento Saiki (Mitsubishi Electric), Takana Kaho (SIT)
p. 50

ED2022-97
[Invited Talk] Microwave Semiconductor Devices and Circuits for Industrial Innovation
Kazuhiko Honjo (UEC)
pp. 51 - 54

Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.

The Institute of Electronics, Information and Communication Engineers (IEICE), Japan