IEICE Technical Report

Online edition: ISSN 2432-6380

Volume 122, Number 52

Electron Devices

Workshop Date : 2022-05-27 / Issue Date : 2022-05-20

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Table of contents

ED2022-7
[Invited Talk] Imprementation and Analysis of Energy Harvesting Device Utilizing Radiative Heating and Cooling
Yoshinari Kamakura, Kyoya Minato, Yuma Fujita, Yuhei Suzuki (OIT)
pp. 1 - 4

ED2022-8
Development of ZnO/Conductive-Fabrics for Flexible Thermoelectric Devices
Nobuhiro Kawase, Naoki Fujiwara, Masaru Shimomura (Shizuoka Univ.), Toshitaka Yamakawa (Kumamoto Univ.), Kazushi Ikeda (NAIST), Yasuhiro Hayakawa, Hiroya Ikeda (Shizuoka Univ.)
pp. 5 - 8

ED2022-9
Formation of Periodical Unique Structure by Free Electron Laser Irradiation
Masayoshi Nohira, Youta Hoshino, Nobuyuki Iwata (Nihon Univ.)
pp. 9 - 12

ED2022-10
Reactive Sputtering of Nitride Dielectric Film for Silicon Photonics Applications
Takaaki Fukushima, Jose A. Piedra Lorenzana, Rui Tsuchiya, Takeshi Hizawa, Yasuhiko Ishikawa (Toyohashi Univ. Tech.)
pp. 13 - 16

ED2022-11
Single-electron tunneling through multiple-donor QDs in high-concentration co-doped Si nanoscale transistors
Taruna Teja Jupalli, Tsutomu Kaneko, Chitra Pandy, Daniel Moraru (Shizuoka Univ.)
pp. 17 - 20

ED2022-12
Study on semiconductor-based nonlinear dynamic node for physical reservoir computing system
Seiya Kasai, Shunsuke Saito (Hokkaido Univ.)
pp. 21 - 24

ED2022-13
Wet etching of GaN utilizing a photo-electrochemical reaction for functional materials
Taketomo Sato, Masachika Toguchi (Hokkaido Univ.)
pp. 25 - 28

ED2022-14
Crystal Growth of YbFe2O4 Thin Films on Al2O3(0001) and YSZ(111) Substrates
Kenshin Kurumai, Takehiro Teraji, Reo Tamura, Nobuyuki Iwata (Nihon Univ)
pp. 29 - 34

ED2022-15
Characterization method of semiconductors under Ohmic-metals by using multi-probe Hall devices
Kazuya Uryu (JAIST/ATL), Shota Kiuchi (JAIST), Taku Sato (ATL), Toshi-kazu Suzuki (JAIST)
pp. 35 - 38

ED2022-16
Study on TiAl-based ohmic electrodes on AlGaN/GaN heterostructures
Mao Fukinaka, Yoshiki Akira, Hiroshi Okada (TUT)
pp. 39 - 42

Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.


The Institute of Electronics, Information and Communication Engineers (IEICE), Japan