IEICE Technical Report

Online edition: ISSN 2432-6380

Silicon Device and Materials

Workshop Date : 2023-10-13 / Issue Date : 2023-10-06

SDM2023-54
[Invited Talk] Defect Reduction in UV Nanoimprint Lithography
Toshiki ITO (Canon)
pp. 1 - 6

SDM2023-55
[Invited Talk (Young Researcher)] Investigation on Thermoelectric Properties of Flexible Thermoelectric Power Generators from Conductive Fabrics
Hudzaifah Al Hijri, Daiki Kansaku, Hiroya Ikeda (Shizuoka Univ.)
pp. 7 - 12

SDM2023-56
[Invited Talk] Determination of charge centroid location and energy depth of charge carriers trapped in silicon nitride charge-trap layers
Kiyoteru Kobayashi (Tokai Univ.)
pp. 13 - 20

SDM2023-57
[Invited Talk] statistical analysis of random telegraphic noise dependence on operating condition using electrical characteristic measurement platform
Takezo Mawaki, Rihito Kuroda (Tohoku Univ.)
pp. 21 - 26

SDM2023-58
Excimer laser annealing method with the controlled grain size of poly-Si films and TFT characteristics
Shu Nishida, Keita Katayama, Daisuke Nakamura (Kyushu Univ.), Tetsuya Goto (Tohoku Univ.), Hiroshi Ikenoue (Kochi Univ. of Technology)
pp. 27 - 33

SDM2023-59
Formation and basic evaluation of gallium oxide thin film on sapphire substrate
Fuminobu Imaizumi, Takumi Morita (NIT, Oyama college)
pp. 34 - 39

SDM2023-60
Formation process of GaN MOS interface suppressing interfacial oxidation
Tsurugi Kondo, Katsunori Ueno, Ryo Tanaka, Shinya Takashima, Masaharu Edo (Fuji Electric), Tomoyuki Suwa (NICHe, Tohoku Univ.)
pp. 40 - 45

SDM2023-61
A study on the integration process of ReRAM and OFET utilizing Nitrogen doped LaB6/LaBxNy stacked structure
Jiaang Zhao, Shun-ichiro Ohmi (Tokyo Tech)
pp. 46 - 49

Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.

The Institute of Electronics, Information and Communication Engineers (IEICE), Japan