IEICE Technical Report

Online edition: ISSN 2432-6380

Silicon Device and Materials

Workshop Date : 2024-02-21 / Issue Date : 2024-02-14

SDM2023-81
[Invited Talk] Pre-treatment Study for Barrier-less Ruthenium Filling into Single Damascene via of Sub 20nm Hole
Ryota Yonezawa, Kai-Hung Yu, Hirokazu Aizawa, Hidenao Suzuki, Cory Wajda, Gert Leusink (TTCA)
pp. 1 - 3

SDM2023-82
[Invited Talk] Development of Superconducting Nb Interconnects for Low-Temperature SoC for Qubit Control
Hideaki Numata, Noriyuki Iguchi (NBS), Masamitsu Tanaka (Nagoya Univ.), Koichiro Okamoto, Sadahiko Miura (NBS), Ken Uchida (UTokyo), Hiroki Ishikuro (Keio Univ.), Toshitsugu Sakamoto, Munehiro Tada (NBS)
pp. 4 - 8

SDM2023-83
[Invited Talk] Development of Backside Buried Metal Layer Technology to Enhance Power Integrity of Three-Dimensional Integrated Circuits
Naoya Watanabe, Yuuki Araga, Haruo Shimamoto (AIST), Makoto Nagata (Kobe Univ.), Katsuya Kikuchi (AIST)
pp. 9 - 15

SDM2023-84
[Invited Talk] Direct observation of local electromagnetic field distribution in materials and devices
Naoya Shibata (UTokyo)
pp. 16 - 19

SDM2023-85
[Invited Talk] Optimization of Pre-Bonding Surface for Cu/SiCN Hybrid Bonding
Kohei Nakayama, Kenta Hayama, Yutesu Kamiya, Fmihiro Inoue (YNU)
pp. 20 - 26

SDM2023-86
[Invited Talk] Metallization and CMOS Directly Bonded to Array (CBA) Technology for 3D Flash Memory
Masayoshi Tagami (KIOXIA)
pp. 27 - 30

SDM2023-87
[Invited Talk] Recent Studies of WoW and CoW Cu-Cu Hybrid Bonding
Yoshihisa Kagawa, Yukako Ikegami, Takahiro Kamei, Hayato Iwamoto (SSS)
pp. 31 - 35

Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.

The Institute of Electronics, Information and Communication Engineers (IEICE), Japan