Online edition: ISSN 2432-6380
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ED2024-20
Optical gain study of HVPE-AlN substrates by variable stripe length method
Ryota Ishii, Nagato Sumita (Kyoto Univ.), Tatsuya Hitomi, Reo Yamamoto, Toru Nagashima (Tokuyama), Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.)
pp. 1 - 4
ED2024-21
Carrier and phonon dynamics in quantum wells
Masaya Chizaki, Yoshihiro Ishitani (Chiba Univ.)
pp. 5 - 8
ED2024-22
Strain relaxation and surface recombination in InGaN based nanopillars
Takao Oto, Shunya Kosuge (Yamagata Univ.), Takeki Aikawa, Umito Kurabe, Akihiko Kikuchi (Sophia Univ.)
pp. 9 - 12
ED2024-23
Study on crystal quality and device performance improvement in GaInN/GaN MQW photoelectric transduders
Tomoki Kojimai, Soutarou Ishida, Takashi Egawa, Makoto Miyoshi (NIT)
pp. 13 - 16
ED2024-24
Significant Enhancement of Yellow-Green Emissions from InGaN/GaN Quantum Wells Using Metallic Nanostructures and Dielectric Thin Films
Koichi Okamoto, Naoki Ueda, Kosuke Fujioka, Kenta Mitoda, Tetsuya Matsuyama, Kenji Wada (Osaka Metropolitan Univ.), Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.)
pp. 17 - 20
ED2024-25
A study on the carrier dynamics in InGaN quantum-well systems with different well numbers
Itsuki Shimbo, Hiroki Tosa, Shoki Jinno, Keito Mori-Tamamura, Atsushi A. Yamaguchi (KIT), Kazunori Iwamitsu, Shigetaka Tomiya (NAIST)
pp. 21 - 24
ED2024-26
A study on the carrier dynamics in InGaN quantum-well systems with different alloy compositions
Yamagata Ririka, Itsuki Shimbo, Keito Mori-Tamamura, Atsushi A. Yamaguchi (kanazawa Inst. Tech.), Kazunori Iwamitsu, Shigetaka Tomiya (NAIST)
pp. 25 - 28
ED2024-27
Carrier diffusion processes in InGaN quantum wells measured by time-resolved PL measurements
Osuke Ito, Atsushi A. Yamaguchi (Kanazawa Inst. Tech.), Maiko Ito, Rintaro Koda, Tatsushi Hamaguchi (Sony Semiconductor Solutions Corp.)
pp. 29 - 32
ED2024-28
Realization of high-energy-efficiency photocatalysts by heterojunction formation of two-dimensional layered materials
Yohei Mori, Baskar Malathi, Atsushi Nakamura (Shizuoka Univ.)
pp. 33 - 36
ED2024-29
Properties of nickel hydroxide thin films as a semiconductor
Koji Abe (Nitech)
pp. 37 - 40
ED2024-30
Neuromorphic Device Application of PEDOT:PSS/ZnO Nanorods /ZnO:Ga Heterostructures
-- Device Fabrication and Current-Voltage Properties --
Tomoaki Terasako (Ehime Univ.), Masakazu Yagi (Natl. Inst. Technol, Kagawa Col.), Rajasekaran Palani, Tetsuya Yamamoto (Kochi Univ. Technol.)
pp. 41 - 44
ED2024-31
Neuromorphic Device Application of PEDOT:PSS/ZnO Nanorods /ZnO:Ga Heterostructures
-- Pulse Operation Properties --
Tomoaki Terasako (Ehime Univ.), Masakazu Yagi (Natl. Inst. Technol., Kagawa Coll.), Rajasekaran Palani, Tetsuya Yamamoto (Kochi Univ. Technol.)
pp. 45 - 48
ED2024-32
A Screening Test of GaN-HEMTs for Improvement of Breakdown Voltage Uniformity
Wataru Saito, Shin-ichi Nishizawa (Kyushu Uni.)
pp. 49 - 52
ED2024-33
Fabrication and device characteristics estimation of AlGaN/GaN CAVETs on Si substrates with strained layer superlattice as current blocking layer and δ-doped conductive buffer layer
Toshiharu Kubo, Ryutaro Miki, Takashi Egawa (NITech)
pp. 53 - 56
ED2024-34
Estimation of electrical properties of AlGaN/GaN HEMTs on Si substrates with strained layer superlattice and graded AlGaN layer as the transition layer
Ryutaro Miki, Toshiharu Kubo, Takashi Egawa (NIT)
pp. 57 - 60
ED2024-35
Two-dimensional characterization of the GaN JBS structure by using scanning internal photoemission microscopy
Hiroki Imabayashi, Haruto Yoshimura (Univ. of Fukui), Hiroshi Ohta, Tomoyoshi Mishima (Hosei Univ.), Kenji Shiojima (Univ. of Fukui)
pp. 61 - 64
ED2024-36
Device fabrication and characterization of GaN HBTs with a p-type base region based-on GaInN/GaN MQW structures
Ryosei Inoue, Tomoki Kojima, Akira Mase, Takashi Egawa, Makoto Miyoshi (Nagoya Inst. of Tech.)
pp. 65 - 68
ED2024-37
Mist Chemical Vapor Deposited Gate Dielectrics for GaN-Based MOS Device
Zenji Yatabe, Masaya Fukumitsu, Hiroshi Otake, Takumi Hirakura, Hadirah Radzuan (Kumamoto Univ.), Ryota Ochi (Hokkaido Univ.), Yusui Nakamura (Kumamoto Univ.), Taketomo Sato (Hokkaido Univ.)
pp. 69 - 72
ED2024-38
Improved performance of InP-based MOS-HEMTs by H2O vapor oxidant source for ALD-Al2O3 gate insulator films
Shiro Ozaki, Yusuke Kumazaki, Naoya Okamoto, Yasuhiro Nakasha, Toshihiro Ohki, Hara Naoki (Fujitsu)
pp. 73 - 78
Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.