IEICE Technical Report

Online edition: ISSN 2432-6380

Silicon Device and Materials

Workshop Date : 2024-06-21 / Issue Date : 2024-06-14

SDM2024-19
[Invited Talk] Impact of Surface Potential Distribution at Insulator/Semiconductor Interface on Electrical Properties of MOS capacitor
Noriyuki Taoka, Yusuke Ichino, Yoshiyuki Seike, Tatsuo Mori (AIT)
pp. 1 - 4

SDM2024-20
[Invited Talk] First-Principles Prediction on NO Annealing Effect to SiC(0001) Step Interface
Mitsuharu Uemoto, Nahoto Funaki (Kobe Univ.), Takuji Hosoi (Kwansei Univ.), Tomoya Ono (Kobe Univ.)
pp. 5 - 8

SDM2024-21
[Invited Talk] Random Potential Induced Characteristics Variations in MOSFETs
Nobuya Mori (Osaka Univ.)
pp. 9 - 12

SDM2024-22
[Invited Talk] Demonstration of AlN-Based Vertical p-n Diodes with Distributed Polarization Doping
Takeru Kumabe (Nagoya Univ.), Akira Yoshikawa (Asahi Kasei), Seiya Kawasaki, Maki Kushimoto, Yoshio Honda, Manabu Arai, Jun Suda, Hiroshi Amano (Nagoya Univ.)
pp. 13 - 16

SDM2024-23
[Invited Talk] High-responsivity graphene-based visible image sensors by photogating effect
Masaaki Shimatani, Shoichiro Fukushima, Manabu Iwakawa, Shinpei Ogawa (Mitsubishi Electric)
pp. 17 - 20

SDM2024-24
[Invited Talk] *
Michiko Yoshitake (OSX)
pp. 21 - 23

SDM2024-25
[Invited Talk] Energy Band Structure and Carrier Transport Mechanism of Organic Semiconductors -- Observation of Conduction Band Structure and Evidence of Polaron --
Hiroyuki Yoshida (Chiba Univ.)
pp. 24 - 27

Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.

The Institute of Electronics, Information and Communication Engineers (IEICE), Japan