IEICE Technical Report

Online edition: ISSN 2432-6380

Silicon Device and Materials

Workshop Date : 2025-10-31 / Issue Date : 2025-10-24

SDM2025-46
[Memorial Lecture] Statistical Measurement Technology for Integrated Devices
Koga Saito, Ryoya Nishimaki, Takezo Mawaki, Rihito Kuroda (Tohoku Univ.)
pp. 1 - 4

SDM2025-47
Statistical Capacitance Measurement of Si Trench Capacitors Using Array Test Circuit and 3D Stacking Thereof
Ryoya Nishimaki, Koga Saito, Takezo Mawaki, Rihito Kuroda (Tohoku Univ.)
pp. 5 - 8

SDM2025-48
[Tutorial Lecture] Introduction to Machine Learning for Process Optimization and Case Study in GaN MOCVD
Shota Seki (Aixtal)
p. 9

SDM2025-49
[Invited Talk] Ferroelectric HfNx Film Formation Using Minimal Fab Reactive Sputtering Tool
Shuichi Noda (AIST), Shiro Hara (AIST, Hundred)
pp. 10 - 13

SDM2025-50
Influence of annealing ambient on the ferroelectric characteristics of HfN thin films formed by ECR-plasma sputtering
Kangbai Li, Shun'ichiro Ohmi (Science Tokyo)
pp. 14 - 17

SDM2025-51
Hydrogen Plasma-Induced Ultra-Low Carrier Density in Polycrystalline p/n-Ge Thin Films
Koki Nozawa, Takashi Suemasu, Kaoru Toko (Univ. of Tsukuba)
pp. 18 - 20

SDM2025-52
Investigation of LaBₓNᵧ/N-doped LaB₆ Gate Stack Formed by Reactive Sputtering utilizing LaB₆ Metal Target for Pentacene-based Organic Field-Effect Transistors
Kaiyun Tseng, Shun-ichiro Ohmi (Science Tokyo)
pp. 21 - 25

SDM2025-53
Heteroepitaxial growth and surface control of gallium oxide thin films
Fuminobu Imaizumi (NIT, Oyama college)
pp. 26 - 29

SDM2025-54
[Invited Talk]
Toshifumi Irisawa (AIST)
pp. 30 - 33

Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.

The Institute of Electronics, Information and Communication Engineers (IEICE), Japan