Online edition: ISSN 2432-6380
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ED2025-23
Temperature Characterization of Vertical GaN Devices on Silicon Substrates
Ryoya Aono, Shoma Nakashima, Tatsuya Kondo, Toshiharu Kubo, Takashi Egawa (Nagoya Inst. of Tech.)
pp. 1 - 4
ED2025-24
Characterization of AlGaN multi-channel HFETs fabricated on single-crystal AlN substrates by MOCVD
Hitoshi Susuki, Syotaro Sato, Syuto Kamiya, Takashi Egawa, Makoto Miyoshi (NITech)
pp. 5 - 8
ED2025-25
Study on polarization-matched III-nitride RTDs with AlGaInN quantum wells and AlInN barriers
Hikaru Imaizumi, Akira mase, Takashi Egawa, Makoto Miyoshi (Nitech)
pp. 9 - 12
ED2025-26
Isolation Characteristics of GaN Mesas on Diamond Substrates Fabricated Using the Surface-Activated Bonding and Dry Etching
Yosei Sunamoto (Osaka Metropolitan Univ.), Tetsuya Suemitsu (Tohoku Univ.), Takeshiro Shimaoka, Hideaki Yamada (AIST.), Jianbo Liang, Naoteru Shigekawa (Osaka Metropolitan Univ.)
pp. 13 - 16
ED2025-27
Thermally Robust 3C-SiC/Diamond and Si (111)/Diamond Templates for Advanced III-Nitride Process
Hikaru Iwamoto (Osaka Metropolitan Univ.), Yutaka Ohno (Tohoku Univ.), Jianbo Liang, Naoteru Shigekawa (Osaka Metropolitan Univ.)
pp. 17 - 20
ED2025-28
Identification of Killer Defects in AlGaN-based UV-B Laser Diodes via Correlative Analysis of Crystal Defects and Device Performance
Seiya Kato, Takumu Saito, Shunndai Maruyama, Shougo Karino, Yusuke Sasaki, Rinntarou Miyake, Shionn Kamiya, Ryouta Watanabe, Yuma Miyamoto, Naoki Kitta, Sho Iwayama, Tetuya Takeuchi, Satosi Kamiyama (Meijo Univ), Hideto Miyake (Mie Univ), Motoaki Iwaya (Meijo Univ)
pp. 21 - 24
ED2025-29
Fabrication of refractive index waveguide AlGaN-based UV-B laser diodes and demonstration of their continuous wave oscillation
Rintaro Miyake, Takumu Saito, Shundai Maruyama, Shogo Karino, Yusuke Sasaki, Shion Kamiya, Ryota Watanabe, Yuma Miyamoto, Naoki Kitta, Seiya Kato, Sho Iwayama, Tetsuya Takeuchi, Satoshi Kamiyama (Meijo Univ.), Hideto Miyake (Mie Univ.), Motoaki Iwaya (Meijo Univ.)
pp. 25 - 28
ED2025-30
Fabrication of InGaN-based yellow to red LEDs on cleaved ScAlMgO4 substrates
Mitsuru Funato, Kodai Takemura, Yoshinobu Matsuda (Kyoto univ.), Makoto Matsukura, Shigenori Shimizu (OXIDE Corp.), Yoichi Kawakami (Kyoto univ.)
pp. 29 - 32
ED2025-31
Introduction of biexciton to the integrated system of exciton-radiation analysis and extension to quantum well system
Teppei Maruyama, Keusuke Oki, Si Thã‚¥ Hein, Yoshihiro Ishitani (Chiba Univ.)
pp. 33 - 36
ED2025-32
Optimization of Growth Condition of CBD MgZnO Nanorods Films
Nana Fujita, Tomoaki Terasako (Ehime Univ.), Mazakazu Yagi (Natl. Inst. Technol., Kagawa Coll.), Tetsuya Yamamoto (Kochi Univ. Technol.)
pp. 37 - 40
ED2025-33
Potentiation-Depression and Paired-Pulse Facilitation Properties of PEDOT:PSS/ZnO Nanorods/GZO Heterojunctions
Tomoaki Terasako, Sayaka Ikeda (Ehime Univ.), Masakazu Yagi (Natl. Inst. Technol., Kagawa Coll.), Tetsuya Yamamoto (Kochi Univ. Technol.)
pp. 41 - 44
ED2025-34
Photoelectrochemical water splitting performance using NiO-loaded GaN-based photoanode
Kazuhide Kumakura (Hokkaido Univ.), Yudai Yamashita, Kazuyuki Hirama, Yoshitaka Taniyasu (NTT), Taketomo Sato (Hokkaido Univ.)
pp. 45 - 48
ED2025-35
Control of near-interface defects by low-damage etching and annealing in MOS structures using p-type GaN
Masanobu Takahashi, Takahiro Shimazaki, Taketomo Sato, Masamichi Akazawa (Hokkaido Univ.)
pp. 49 - 52
ED2025-36
Mist Thermal Oxidation of GaN Surface
Zenji Yatabe (Hokkaido Univ.), Ryosuke Hamasuna, Takumi Hirakura, Thin Nu Soe, Yusui Nakamura (Kumamoto Univ.)
pp. 53 - 56
ED2025-37
Optical gain spectroscopy of a red-light-emitting InGaN-based LED epitaxial layer
Itsuki Shimbo, Atsushi A. Yamaguchi (Kanazawa Inst. of Tech.), Daisuke Iida, Kazuhiro Ohkawa (KAUST)
pp. 57 - 60
ED2025-38
Studies on Functional Forms of Photoluminescence Decay Curves in InGaN Quantum Wells
Arata Suzaki, Ririka Yamagata, Itsuki Shimbo, Atushi A.Yamaguchi (Kanazawa Inst. Tech.), Daisuke Iida, Kazuhiro Ohkawa (KAUST)
pp. 61 - 64
ED2025-39
Temperature and wavelength dependence of photoluminescence lifetime in InGaN quantum wells with different alloy composition
Ririka Yamagata, Soma Hatanaka, Soya Yamagishi, Itsuki Shinbo, Atsushi A. Yamaguchi (Kanazawa Inst. Tech.), Kazunori Iwamitsu, Shigetaka Tomiya (NAIST)
pp. 65 - 68
ED2025-40
Temperature dependence of carrier diffusion constants in InGaN quantum wells estimated by time-resolved photoluminescence measurements
Osuke Ito, Kotaro Akiyama, Yuta Sakurai, Atsushi A. Yamaguchi (Kanazawa Inst. Tech.), Maiko Fukui, Rintaro Koda, Tatsushi Hamaguchi (Sony Semiconductor Solutions Corp.)
pp. 69 - 72
Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.