IEICE Technical Report

Online edition: ISSN 2432-6380

Volume 125, Number 347

Silicon Device and Materials

Workshop Date : 2026-01-28 / Issue Date : 2026-01-21

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Table of contents

SDM2025-65
[Invited Talk] Trends in Embedded Volatile and Non-Volatile Memories for Scalable Edge AI Applications
Tomoya Saito, Koichi Nose, Tomoya Ogawa, Yasuhiko Taito, Takahiro Shimoi, Kosei Fujishiro, Takashi Ito (Renesas Electronics)
pp. 1 - 4

SDM2025-66
[Invited Talk] Oxide-semiconductor Channel Transistor DRAM (OCTRAM) for High-density and Low-power AI memory
Takeru Maeda (Kioxia)
pp. 5 - 6

SDM2025-67
[Invited Talk] Highly Stackable Oxide-semiconductor Channel Transistor Technology for Future High-density and Low-power 3D DRAM
Takafumi Masuda, Takamitsu Ochi, Tsuyoshi Sugisaki, Takanori Akita, Fumiya Kimura, Kiichi Sato, Isamu Ujiie, Sota Mochizuki, Masayoshi Iwayama, Atsuko Sakata, Shinji Miyano, Kazuki Eshiro, Tomomasa Ueda, Nobuyoshi Saito, Keiji Ikeda, Mutsumi Okajima (Kioxia)
pp. 7 - 8

SDM2025-68
[Invited Talk] Crystal Indium Oxide for 64-kbit 2T0C Memory with 5-ns Read Time, Monolithically Stacked on Si CMOS
Takanori Matsuzaki, Kazuma Furutani, Takanori Ito, Taichi Ebihara, Hiroki Inoue, Takeya Hirose, Haruki Katagiri, Chihiro Inagaki, Hiroki Komagata, Yoshinori Ando, Motomu Kurata, Tsutomu Murakawa, Fumito Isaka, Yuji Egi, Tatsuya Onuki, Yuto Yakubo (Semiconductor Energy Laboratory), Toru Nakura (Fukuoka University), Shunpei Yamazaki (Semiconductor Energy Laboratory)
pp. 9 - 12

SDM2025-69
[Invited Talk] On the Statistical Variability of High-Performance Crystalline InGaOx Nanosheet Oxide Semiconductor FETs
Xingyu Huang, Kota Sakai, Anlan Chen (Univ. of Tokyo), Takanori Takahashi (NAIST), Mutsunori Uenuma (AIST), Yukiharu Uraoka (NAIST), Takuya Saraya, Toshiro Hiramoto, Masaharu Kobayashi (Univ. of Tokyo)
pp. 13 - 16

SDM2025-70
[Invited Talk] Electron Transport Properties in Nanosheet MOSFETs - From Assessment of Optimum Channel System to Operation at Cryogenic Temperatures
Shinichi Takagi (Teikyo Univ.), Kei Sumita, Xueyang Han, Zhao Jin, Yutong Chen, Min-soo Kang, Mitsuru Takenaka, Kasidit Toprasertpong (U. Tokyo)
pp. 17 - 20

SDM2025-71
[Invited Talk] Silicon-on-Insulator Pixel FinFET Technology for a High Conversion Gain and Low Dark Noise 2-Layer Transistor Pixel Stacked CIS
Ryohei Takayanagi (Sony Semiconductor Solutions)
pp. 21 - 24

Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.

The Institute of Electronics, Information and Communication Engineers (IEICE), Japan