Online edition: ISSN 2432-6380
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SDM2026-44
[Invited Talk]
Technology Trend of GAA/3D-Stacked FET and Activities of LSTC
Toshiro Hiramoto (UTokyo/LSTC), Hitoshi Wakabayashi (Science Tokyo/LSTC)
pp. 1 - 2
SDM2026-45
[Invited Talk]
Simulation of Spin Exchange Interaction in Quantum Dots
-- Incorporating Inhomogeneous Dielectric Environments Using a Green’s-Function Method --
Hidehiro Asai, Shota Iizuka, Junichi Hattori, Tsutomu Ikegami, Takashi Nakayama, Takahiro Mori (AIST)
pp. 3 - 6
SDM2026-46
[Invited Talk]
An Experiment-Driven Approach to Modeling Wafer-to-Wafer Bonding for 3D Integration
Fumihiro Inoue (YNU)
pp. 7 - 10
SDM2026-47
[Invited Talk]
Twisting in High Aspect Ratio Etching with Charging Effects as a Stochastic Mechanism
Taishi Ikeda, Hisashi Kotakemori, Satoshi Nakamura, Kenta Yashima, Takumi Ohmura, Yasuyuki Kayama (DSRJ), YunTae Lee, Yukihide Tsuji, Shinwook Yi, Moon-Hyun Cha, Jaehoon Jeong (SEC)
pp. 11 - 16
SDM2026-48
[Invited Talk]
A TCAD-SPICE Simulation Framework for Quantitative Evaluation of MOSFET Properties from SEM Transient Signals
Yuika Kobayashi, Yohei Nakamura (Hitachi), Shinji Yamaguchi (Hitachi High-Tech)
pp. 17 - 22
SDM2026-49
[Invited Talk]
Memory Window Variability Modeling of FeFETs
Kenichiro Sonoda, Shibun Tsuda, Tadashi Yamaguchi, Atsushi Amo, Eiji Tsukuda (Renesas Electronics)
pp. 23 - 28
SDM2026-50
[Invited Talk]
Simulation Study on Scaling Limits of Z-direction Pitch in 3D Flash Memories: Toward the Sub-40 nm Regime
Tatsuo Ogura, Yuma Hizume, Yuto Ozeki, Takayuki Kakegawa, Hiroshi Takeda, Takashi Kurusu, Tomohiro Oki, Katsuyuki Sekine (KIOXIA)
pp. 29 - 30
SDM2026-51
[Invited Talk]
SISPAD2026 Review
Shingo Sato (Kansai Univ.)
pp. 31 - 36
SDM2026-52
[Invited Talk]
Revisiting the Physical Foundations of Quantum Transport in Anisotropic Low-Dimensional Semiconductor Nanostructures
Nobuya Mori (UOsaka)
pp. 37 - 40
SDM2026-53
[Invited Talk]
Physics-Informed Neural Networks for Semiconductor Device Analysis: From Forward to Inverse Problems
Satofumi Souma (Kobe Univ.), Akiko Ueda (AIST)
pp. 41 - 46
SDM2026-54
A Unified Framework for MOSFET Drain Saturation Current Based on Drift-Saturation Velocity Competition
Naoyuki Shigyo, Oki Miura (Kumamoto Univ.)
pp. 47 - 50
SDM2026-55
[Invited Talk]
Modeling of Soft Errors in CFET SRAM Using Machine Learning-Assisted Circuit Simulation
Vanness Filbert Cierra, Yoshinari Kamakura (Osaka Inst. Tech.)
pp. 51 - 56
SDM2026-56
Proposal of ultra low-cost high-density, high-speed memory and logic LSI with novel stacked GAA transistors for generative AI generation
Ryo Ishikawa, Shigeyoshi Watanabe (SIT)
pp. 57 - 62
Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.