IEICE Technical Report

Online edition: ISSN 2432-6380

Silicon Device and Materials

Workshop Date : 2026-06-29 / Issue Date : 2026-06-22

SDM2026-16
[Invited Talk] A shared 300mm-pilot line for prototyping of stacked Si-nanosheet transistors with gate-all-around (GAA) structure: Following a paradigm shift in semiconductor structures -- Following a paradigm shift in semiconductor structures --
Yoshihiro Hayashi, Toshifumi Irisawa (AIST)
pp. 1 - 4

SDM2026-17
[Invited Talk] Fabrication of high quality Ge-on-Insulator based on Ge-on-Nothing technology
Keisuke Yamamoto (Kumamoto Univ.), Dong Wang (Kyushu Univ.), Roger Loo, Clément Porret, Valérie Depauw (imec), Jinyoun Cho, Kristof Dessein (Umicore)
pp. 5 - 8

SDM2026-18
[Invited Talk] Epitaxial Growth and Quantum Engineering of Sn-related Group-IV Alloy Heterostructures
Osamu Nakatsuka, Shigehisa Shibayama, Masashi Kurosawa, Mitsuo Sakashita (Nagoya Univ.)
pp. 9 - 12

SDM2026-19
(See Japanese page.)
pp. 13 - 15

SDM2026-20
[Invited Talk] Development of Spin-Resolved Micro-ARPES and Its Application to Polycrystalline Materials
Shunsuke Tsuda (NIMS)
p. 16

SDM2026-21
[Invited Talk] Photocurrent Microscopy of Single Defect Center: Observation and Spatial Resolution of Diamond NV Center
Shunki Nakamura (Tohoku Univ.), Naoya Morioka, Norikazu Mizuochi (Kyoto Univ.), Shigemi Mizukami, Hiroki Morishita (Tohoku Univ.)
p. 17

Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.

The Institute of Electronics, Information and Communication Engineers (IEICE), Japan