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Paper Abstract and Keywords
Presentation 2007-04-12 10:00
A high-density 1T-4MTJ MRAM with Self-Reference Sensing Scheme
Yasumitsu Murai, Hiroaki Tanizaki (Renesas Design), Takaharu Tsuji, Jun Otani, Yuichiro Yamaguchi, Haruo Furuta, Shuichi Ueno, Tsukasa Oishi, Masanori Hayashikoshi, Hideto Hidaka (Renesas) ICD2007-3
Abstract (in Japanese) (See Japanese page) 
(in English) A high-density memory cell named 1-Transistor 4-Magnetic Tunnel Junction (1T-4MTJ) has been proposed for Magnetic Random Access Memory (MRAM).
The new 1T-4MTJ cell has been successfully demonstrated by a 1Mb MRAM test device, using a 130nm CMOS process.
The sensing scheme of a Self-Reference Sense amplifier with Voltage offset
(SRSV) enables high-speed memory operation (access time) of tAC=56nsec and 50MHz@4Cycle.
Keyword (in Japanese) (See Japanese page) 
(in English) MRAM / MTJ / Self Reference / High density / / / /  
Reference Info. IEICE Tech. Rep., vol. 107, no. 1, ICD2007-3, pp. 13-16, April 2007.
Paper # ICD2007-3 
Date of Issue 2007-04-05 (ICD) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ICD2007-3

Conference Information
Committee ICD  
Conference Date 2007-04-12 - 2007-04-13 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To ICD 
Conference Code 2007-04-ICD 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) A high-density 1T-4MTJ MRAM with Self-Reference Sensing Scheme 
Sub Title (in English)  
Keyword(1) MRAM  
Keyword(2) MTJ  
Keyword(3) Self Reference  
Keyword(4) High density  
Keyword(5)  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Yasumitsu Murai  
1st Author's Affiliation Renesas Design Corporation (Renesas Design)
2nd Author's Name Hiroaki Tanizaki  
2nd Author's Affiliation Renesas Design Corporation (Renesas Design)
3rd Author's Name Takaharu Tsuji  
3rd Author's Affiliation Renesas Technology Corporation (Renesas)
4th Author's Name Jun Otani  
4th Author's Affiliation Renesas Technology Corporation (Renesas)
5th Author's Name Yuichiro Yamaguchi  
5th Author's Affiliation Renesas Technology Corporation (Renesas)
6th Author's Name Haruo Furuta  
6th Author's Affiliation Renesas Technology Corporation (Renesas)
7th Author's Name Shuichi Ueno  
7th Author's Affiliation Renesas Technology Corporation (Renesas)
8th Author's Name Tsukasa Oishi  
8th Author's Affiliation Renesas Technology Corporation (Renesas)
9th Author's Name Masanori Hayashikoshi  
9th Author's Affiliation Renesas Technology Corporation (Renesas)
10th Author's Name Hideto Hidaka  
10th Author's Affiliation Renesas Technology Corporation (Renesas)
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Speaker Author-1 
Date Time 2007-04-12 10:00:00 
Presentation Time 30 minutes 
Registration for ICD 
Paper # ICD2007-3 
Volume (vol) vol.107 
Number (no) no.1 
Page pp.13-16 
#Pages
Date of Issue 2007-04-05 (ICD) 


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