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Paper Abstract and Keywords
Presentation 2007-04-12 14:50
High-speed Operation SRAM cell using Bulk-type Thyristor
Taro Sugizaki, Motoaki Nakamura, Masashi Yanagita, Motonari Honda, Mitsuko Shinohara, Tetsuya Ikuta, Tomokazu Ohchi, Katsuhisa Kugimiya, Ryo Yamamoto, Saori Kanda, Ikuhiro Yamamura, Kojiro Yagami, Tatsuji Oda (Sony corp.) ICD2007-9
Abstract (in Japanese) (See Japanese page) 
(in English) We have successfully developed an alternative SRAM cell using Bulk Thyristor-RAM (BT-RAM) for the first time. BT-RAM, formed on bulk Si wafers, is low cost and has good compatibility with logic process flows. BT-RAM has excellent performance, with a 100-ps read/write at 1.5 V, high Ion/Ioff current ratio (>1E8), and low stand-by current (< 0.5 nA/cell). We can expect the ideal cell size to be as low as 30 square F, one-fourth that of a conventional 6T-SRAM cell, by using Selective Epitaxy technique for Anode regions (SEA). The BT-RAM is therefore a promising candidate as an alternative SRAM for the 65-nm generation and beyond.
Keyword (in Japanese) (See Japanese page) 
(in English) Thyristor / Bulk Thyristor-RAM / SRAM / Selective Epitaxy / / / /  
Reference Info. IEICE Tech. Rep., vol. 107, no. 1, ICD2007-9, pp. 47-52, April 2007.
Paper # ICD2007-9 
Date of Issue 2007-04-05 (ICD) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee ICD  
Conference Date 2007-04-12 - 2007-04-13 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To ICD 
Conference Code 2007-04-ICD 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) High-speed Operation SRAM cell using Bulk-type Thyristor 
Sub Title (in English)  
Keyword(1) Thyristor  
Keyword(2) Bulk Thyristor-RAM  
Keyword(3) SRAM  
Keyword(4) Selective Epitaxy  
Keyword(5)  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Taro Sugizaki  
1st Author's Affiliation Sony Corporation (Sony corp.)
2nd Author's Name Motoaki Nakamura  
2nd Author's Affiliation Sony Corporation (Sony corp.)
3rd Author's Name Masashi Yanagita  
3rd Author's Affiliation Sony Corporation (Sony corp.)
4th Author's Name Motonari Honda  
4th Author's Affiliation Sony Corporation (Sony corp.)
5th Author's Name Mitsuko Shinohara  
5th Author's Affiliation Sony Corporation (Sony corp.)
6th Author's Name Tetsuya Ikuta  
6th Author's Affiliation Sony Corporation (Sony corp.)
7th Author's Name Tomokazu Ohchi  
7th Author's Affiliation Sony Corporation (Sony corp.)
8th Author's Name Katsuhisa Kugimiya  
8th Author's Affiliation Sony Corporation (Sony corp.)
9th Author's Name Ryo Yamamoto  
9th Author's Affiliation Sony Corporation (Sony corp.)
10th Author's Name Saori Kanda  
10th Author's Affiliation Sony Corporation (Sony corp.)
11th Author's Name Ikuhiro Yamamura  
11th Author's Affiliation Sony Corporation (Sony corp.)
12th Author's Name Kojiro Yagami  
12th Author's Affiliation Sony Corporation (Sony corp.)
13th Author's Name Tatsuji Oda  
13th Author's Affiliation Sony Corporation (Sony corp.)
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Speaker Author-1 
Date Time 2007-04-12 14:50:00 
Presentation Time 30 minutes 
Registration for ICD 
Paper # ICD2007-9 
Volume (vol) vol.107 
Number (no) no.1 
Page pp.47-52 
#Pages 6 
Date of Issue 2007-04-05 (ICD) 

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