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Paper Abstract and Keywords
Presentation 2007-04-13 13:50
Suppression of lateral charge redistribution using advanced impurity trap memory for improving high temperature retention
Hiroshi Sunamura, Taeko Ikarashi, Ayuka Morioka, Setsu Kotsuji, Makiko Oshida, Nobuyuki Ikarashi, Shinji Fujieda, Hirohito Watanabe (NEC) ICD2007-15
Abstract (in Japanese) (See Japanese page) 
(in English) For retention improvement in scaled SONOS-type non-volatile memory, deep traps with controllable density were formed by adding metal impurities into gate oxide. We find that Ti additives create deep traps in silicon dioxide, with high electron capture efficiency. Charge storage node changed from TiO2 floating-gate (15Å) to nano-crystals (3Å), and further to atomic-sized traps (0.4Å) by decreasing Ti amount. Discrete atomic-sized traps successfully suppressed lateral charge redistribution, improving retention at 150oC.
Keyword (in Japanese) (See Japanese page) 
(in English) SONOS / traps / metal impurities / atomic-sized traps / lateral charge redistribution / high temperature retention / /  
Reference Info. IEICE Tech. Rep., vol. 107, no. 1, ICD2007-15, pp. 83-88, April 2007.
Paper # ICD2007-15 
Date of Issue 2007-04-05 (ICD) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee ICD  
Conference Date 2007-04-12 - 2007-04-13 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To ICD 
Conference Code 2007-04-ICD 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Suppression of lateral charge redistribution using advanced impurity trap memory for improving high temperature retention 
Sub Title (in English)  
Keyword(1) SONOS  
Keyword(2) traps  
Keyword(3) metal impurities  
Keyword(4) atomic-sized traps  
Keyword(5) lateral charge redistribution  
Keyword(6) high temperature retention  
Keyword(7)  
Keyword(8)  
1st Author's Name Hiroshi Sunamura  
1st Author's Affiliation NEC Corporation (NEC)
2nd Author's Name Taeko Ikarashi  
2nd Author's Affiliation NEC Corporation (NEC)
3rd Author's Name Ayuka Morioka  
3rd Author's Affiliation NEC Corporation (NEC)
4th Author's Name Setsu Kotsuji  
4th Author's Affiliation NEC Corporation (NEC)
5th Author's Name Makiko Oshida  
5th Author's Affiliation NEC Corporation (NEC)
6th Author's Name Nobuyuki Ikarashi  
6th Author's Affiliation NEC Corporation (NEC)
7th Author's Name Shinji Fujieda  
7th Author's Affiliation NEC Corporation (NEC)
8th Author's Name Hirohito Watanabe  
8th Author's Affiliation NEC Corporation (NEC)
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Speaker Author-1 
Date Time 2007-04-13 13:50:00 
Presentation Time 30 minutes 
Registration for ICD 
Paper # ICD2007-15 
Volume (vol) vol.107 
Number (no) no.1 
Page pp.83-88 
#Pages 6 
Date of Issue 2007-04-05 (ICD) 

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