Paper Abstract and Keywords |
Presentation |
2007-10-11 17:35
UV-response characteristics of insulator/n-GaN MIS structures for sensor application Chihoko Mizue, Tetsuya Matsuyama, Junji Kotani, Marcin Miczek, Tamotsu Hashizume (Hokkaido Univ.) ED2007-164 CPM2007-90 LQE2007-65 Link to ES Tech. Rep. Archives: ED2007-164 CPM2007-90 LQE2007-65 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
For UV-detector application, n-GaN Metal-Insulator-Semiconductor(MIS) structure was fabricated using AlOx, layer which was deposited on n-GaN assisted by Electron Cyclotron Resonance(ECR)-plasma. Diethyl aluminum ethoxide(DEA-E) was used as a source material for AlOx deposition. In the AlOx/GaN MIS structure, the experimental C-V curve was close to the calculated one, and the C-V characteristics were almost independent of temperature. These results indicated a relatively low density of states at the AlOx/n-GaN interface. The capacitance at the depletion region showed a relatively fast response to an UV illumination. We also found that the peak value of capacitance under illumination showed less temperature dependence, indicating the operation stability of the AlOx/n-GaN structure. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
GaN / Al2O3 / MIS / C-V / high temperature / UV-response / UV-detector / Flame detector |
Reference Info. |
IEICE Tech. Rep., vol. 107, no. 251, ED2007-164, pp. 43-46, Oct. 2007. |
Paper # |
ED2007-164 |
Date of Issue |
2007-10-04 (ED, CPM, LQE) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
ED2007-164 CPM2007-90 LQE2007-65 Link to ES Tech. Rep. Archives: ED2007-164 CPM2007-90 LQE2007-65 |
Conference Information |
Committee |
CPM ED LQE |
Conference Date |
2007-10-11 - 2007-10-12 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Fukui Univ. |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Nitride Based Optical and Electronic Devices, Materials and Related Technologies |
Paper Information |
Registration To |
ED |
Conference Code |
2007-10-CPM-ED-LQE |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
UV-response characteristics of insulator/n-GaN MIS structures for sensor application |
Sub Title (in English) |
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Keyword(1) |
GaN |
Keyword(2) |
Al2O3 |
Keyword(3) |
MIS |
Keyword(4) |
C-V |
Keyword(5) |
high temperature |
Keyword(6) |
UV-response |
Keyword(7) |
UV-detector |
Keyword(8) |
Flame detector |
1st Author's Name |
Chihoko Mizue |
1st Author's Affiliation |
Hokkaido University (Hokkaido Univ.) |
2nd Author's Name |
Tetsuya Matsuyama |
2nd Author's Affiliation |
Hokkaido University (Hokkaido Univ.) |
3rd Author's Name |
Junji Kotani |
3rd Author's Affiliation |
Hokkaido University (Hokkaido Univ.) |
4th Author's Name |
Marcin Miczek |
4th Author's Affiliation |
Hokkaido University (Hokkaido Univ.) |
5th Author's Name |
Tamotsu Hashizume |
5th Author's Affiliation |
Hokkaido University (Hokkaido Univ.) |
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Speaker |
Author-1 |
Date Time |
2007-10-11 17:35:00 |
Presentation Time |
25 minutes |
Registration for |
ED |
Paper # |
ED2007-164, CPM2007-90, LQE2007-65 |
Volume (vol) |
vol.107 |
Number (no) |
no.251(ED), no.252(CPM), no.253(LQE) |
Page |
pp.43-46 |
#Pages |
4 |
Date of Issue |
2007-10-04 (ED, CPM, LQE) |
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