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| Presentation | 2007-10-11 17:10 Deep UV Lasing of AlGaN Multiple Quantum Well Lasers and Its Anisotropc Properties of Laser and Spontaneous Edge and Surface Emissions Hideo Kawanishi, Eiichiro Niikura (Kohgakuin Univ.)  ED2007-163 CPM2007-89 LQE2007-64 Link to ES Tech. Rep. Archives: ED2007-163 CPM2007-89 LQE2007-64 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | AlGaN wide-gap semiconductor is promising for UV to Deep-UV laser and light emitting diodes. The AlGaN has optical anisotropic properties, such as anisotropic polarization and anisotropic surface and edge emission, which originate in valence-band structure. This propertie affects to lasing mode, optical polarization of emitted light, and apparent quantum efficiency. In this report, we summarize our recent experimental results and our conclusions. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Deep-UV semiconductor laser / Optical anisotropic property / Crystal-field sprit-off hole band / AlGaN quantum well / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 107, no. 253, LQE2007-64, pp. 39-42, Oct. 2007. | |
| Paper # | LQE2007-64 | |
| Date of Issue | 2007-10-04 (ED, CPM, LQE) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2007-163 CPM2007-89 LQE2007-64 Link to ES Tech. Rep. Archives: ED2007-163 CPM2007-89 LQE2007-64 |
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| Conference Information | |
| Committee | CPM ED LQE |
| Conference Date | 2007-10-11 - 2007-10-12 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Fukui Univ. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Nitride Based Optical and Electronic Devices, Materials and Related Technologies |
| Paper Information | |
| Registration To | LQE |
| Conference Code | 2007-10-CPM-ED-LQE |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Deep UV Lasing of AlGaN Multiple Quantum Well Lasers and Its Anisotropc Properties of Laser and Spontaneous Edge and Surface Emissions |
| Sub Title (in English) | |
| Keyword(1) | Deep-UV semiconductor laser |
| Keyword(2) | Optical anisotropic property |
| Keyword(3) | Crystal-field sprit-off hole band |
| Keyword(4) | AlGaN quantum well |
| Keyword(5) | |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Hideo Kawanishi |
| 1st Author's Affiliation | Kohgakuin University (Kohgakuin Univ.) |
| 2nd Author's Name | Eiichiro Niikura |
| 2nd Author's Affiliation | Kohgakuin University (Kohgakuin Univ.) |
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| Speaker | Author-1 |
| Date Time | 2007-10-11 17:10:00 |
| Presentation Time | 25 minutes |
| Registration for | LQE |
| Paper # | ED2007-163, CPM2007-89, LQE2007-64 |
| Volume (vol) | vol.107 |
| Number (no) | no.251(ED), no.252(CPM), no.253(LQE) |
| Page | pp.39-42 |
| #Pages | 4 |
| Date of Issue | 2007-10-04 (ED, CPM, LQE) |
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