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Paper Abstract and Keywords
Presentation 2007-10-12 09:50
Low leakage current ITO schottky electrode for AlGaN/GaN HEMT
Keita Matsuda, Takeshi Kawasaki, Ken Nakata, Takeshi Igarashi, Seiji Yaegashi (Eudyna Devices) ED2007-167 CPM2007-93 LQE2007-68
Abstract (in Japanese) (See Japanese page) 
(in English) AlGaN/GaN HEMTs are attractive devices for high power switching applications because of their high electron mobility and high breakdown characteristics. However, conventional Ni/Au Schottky electrode has high reverse leakage current[1], which deteriorates reliability and increases power dissipation. Now we report that the reduction of Schottky leakage current and low leakage current HEMT characteristics were achieved by using indium-tin-oxide (ITO) electrode instead of Ni/Au electrode.
Keyword (in Japanese) (See Japanese page) 
(in English) ITO electrode / lower leakage current / Schottky characteristics / temperature dependence / HEMT characteristics / gate leakage current / /  
Reference Info. IEICE Tech. Rep., vol. 107, no. 251, ED2007-167, pp. 57-61, Oct. 2007.
Paper # ED2007-167 
Date of Issue 2007-10-04 (ED, CPM, LQE) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2007-167 CPM2007-93 LQE2007-68

Conference Information
Committee CPM ED LQE  
Conference Date 2007-10-11 - 2007-10-12 
Place (in Japanese) (See Japanese page) 
Place (in English) Fukui Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Nitride Based Optical and Electronic Devices, Materials and Related Technologies 
Paper Information
Registration To ED 
Conference Code 2007-10-CPM-ED-LQE 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Low leakage current ITO schottky electrode for AlGaN/GaN HEMT 
Sub Title (in English)  
Keyword(1) ITO electrode  
Keyword(2) lower leakage current  
Keyword(3) Schottky characteristics  
Keyword(4) temperature dependence  
Keyword(5) HEMT characteristics  
Keyword(6) gate leakage current  
Keyword(7)  
Keyword(8)  
1st Author's Name Keita Matsuda  
1st Author's Affiliation Eudyna Devices Inc. (Eudyna Devices)
2nd Author's Name Takeshi Kawasaki  
2nd Author's Affiliation Eudyna Devices Inc. (Eudyna Devices)
3rd Author's Name Ken Nakata  
3rd Author's Affiliation Eudyna Devices Inc. (Eudyna Devices)
4th Author's Name Takeshi Igarashi  
4th Author's Affiliation Eudyna Devices Inc. (Eudyna Devices)
5th Author's Name Seiji Yaegashi  
5th Author's Affiliation Eudyna Devices Inc. (Eudyna Devices)
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Speaker Author-1 
Date Time 2007-10-12 09:50:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2007-167, CPM2007-93, LQE2007-68 
Volume (vol) vol.107 
Number (no) no.251(ED), no.252(CPM), no.253(LQE) 
Page pp.57-61 
#Pages 5 
Date of Issue 2007-10-04 (ED, CPM, LQE) 

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