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Paper Abstract and Keywords
Presentation 2007-10-12 15:05
Selective MOVPE of InGaN/GaN on a micro-faceted GaN fabricated on an Si substrate
Yoshiki Nakajima, Yoshio Honda, Masahito Yamaguchi, Nobuhiko Sawaki (Nagoya Univ.) ED2007-176 CPM2007-102 LQE2007-77
Abstract (in Japanese) (See Japanese page) 
(in English) Hetero-epitaxial growth of an InGaN thin film was attempted with MOVPE on a GaN facet structure. The GaN trapezoidal structure was grown by selective MOVPE on a (111)Si substrate. The InGaN grown layer on the (0001)top facet shows strong ridge growth which is not explained by the diffusion of chemical species. The CL spectra on the facet were investigated. Remarkable broadening in the spectral peak was found out near the ridge on the (0001)facet which suggests the compositional fluctuation takes place in accordance with the ridge growth.
Keyword (in Japanese) (See Japanese page) 
(in English) InGaN / MOVPE / Selective Area Growth / ridge growth / / / /  
Reference Info. IEICE Tech. Rep., vol. 107, no. 253, LQE2007-77, pp. 97-102, Oct. 2007.
Paper # LQE2007-77 
Date of Issue 2007-10-04 (ED, CPM, LQE) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2007-176 CPM2007-102 LQE2007-77

Conference Information
Committee CPM ED LQE  
Conference Date 2007-10-11 - 2007-10-12 
Place (in Japanese) (See Japanese page) 
Place (in English) Fukui Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Nitride Based Optical and Electronic Devices, Materials and Related Technologies 
Paper Information
Registration To LQE 
Conference Code 2007-10-CPM-ED-LQE 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Selective MOVPE of InGaN/GaN on a micro-faceted GaN fabricated on an Si substrate 
Sub Title (in English)  
Keyword(1) InGaN  
Keyword(2) MOVPE  
Keyword(3) Selective Area Growth  
Keyword(4) ridge growth  
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1st Author's Name Yoshiki Nakajima  
1st Author's Affiliation Nagoya University (Nagoya Univ.)
2nd Author's Name Yoshio Honda  
2nd Author's Affiliation Nagoya University (Nagoya Univ.)
3rd Author's Name Masahito Yamaguchi  
3rd Author's Affiliation Nagoya University (Nagoya Univ.)
4th Author's Name Nobuhiko Sawaki  
4th Author's Affiliation Nagoya University (Nagoya Univ.)
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Speaker Author-1 
Date Time 2007-10-12 15:05:00 
Presentation Time 25 minutes 
Registration for LQE 
Paper # ED2007-176, CPM2007-102, LQE2007-77 
Volume (vol) vol.107 
Number (no) no.251(ED), no.252(CPM), no.253(LQE) 
Page pp.97-102 
#Pages 6 
Date of Issue 2007-10-04 (ED, CPM, LQE) 

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