Paper Abstract and Keywords |
Presentation |
2007-10-12 09:25
Normally-off Operation of AlGaN/GaN MIS-HFET on Non-polar (11-20) plane Masayuki Kuroda, Tetsuzo Ueda, Tsuyoshi Tanaka (MEI) ED2007-166 CPM2007-92 LQE2007-67 Link to ES Tech. Rep. Archives: ED2007-166 CPM2007-92 LQE2007-67 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
GaN-based compound semiconductors are attractive for low-loss power switching devices owing to the high breakdown field and the high saturation electron velocity. Conventional AlGaN/GaN HFETs (Heterojunction Field Effect Transistors) have been fabricated on (0001) c-plane across which the spontaneous and piezoelectric polarization fields produce the extraordinary high sheet carrier concentrations. These sheet carriers made it difficult to achieve normally-off operation, which is strongly desired for the safety operation of power switching devices. Use of non-polar (11-20) a-plane is expected to easily achieve the normally-off operation, since the plane is free from the above-mentioned polarization induced charges. In this paper, we report on normally-off operation of non-polar a-plane AlGaN/GaN metal-insulator-semiconductor (MIS)-HFETs with the threshold voltage of +1.3 V. High drain current of 112 mA/mm is also achieved by the recessed MIS-gate structure with the improved crystal quality on thick AlN buffer layers. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
AlGaN/GaN HFET / Non-polar / Normally-off operation / / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 107, no. 251, ED2007-166, pp. 53-56, Oct. 2007. |
Paper # |
ED2007-166 |
Date of Issue |
2007-10-04 (ED, CPM, LQE) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
ED2007-166 CPM2007-92 LQE2007-67 Link to ES Tech. Rep. Archives: ED2007-166 CPM2007-92 LQE2007-67 |
Conference Information |
Committee |
CPM ED LQE |
Conference Date |
2007-10-11 - 2007-10-12 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Fukui Univ. |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Nitride Based Optical and Electronic Devices, Materials and Related Technologies |
Paper Information |
Registration To |
ED |
Conference Code |
2007-10-CPM-ED-LQE |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Normally-off Operation of AlGaN/GaN MIS-HFET on Non-polar (11-20) plane |
Sub Title (in English) |
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Keyword(1) |
AlGaN/GaN HFET |
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Non-polar |
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Normally-off operation |
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1st Author's Name |
Masayuki Kuroda |
1st Author's Affiliation |
Matsushita Electric Industrial Co., Ltd. (MEI) |
2nd Author's Name |
Tetsuzo Ueda |
2nd Author's Affiliation |
Matsushita Electric Industrial Co., Ltd. (MEI) |
3rd Author's Name |
Tsuyoshi Tanaka |
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Matsushita Electric Industrial Co., Ltd. (MEI) |
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Speaker |
Author-1 |
Date Time |
2007-10-12 09:25:00 |
Presentation Time |
25 minutes |
Registration for |
ED |
Paper # |
ED2007-166, CPM2007-92, LQE2007-67 |
Volume (vol) |
vol.107 |
Number (no) |
no.251(ED), no.252(CPM), no.253(LQE) |
Page |
pp.53-56 |
#Pages |
4 |
Date of Issue |
2007-10-04 (ED, CPM, LQE) |
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