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Paper Abstract and Keywords
Presentation 2007-10-12 09:25
Normally-off Operation of AlGaN/GaN MIS-HFET on Non-polar (11-20) plane
Masayuki Kuroda, Tetsuzo Ueda, Tsuyoshi Tanaka (MEI) ED2007-166 CPM2007-92 LQE2007-67 Link to ES Tech. Rep. Archives: ED2007-166 CPM2007-92 LQE2007-67
Abstract (in Japanese) (See Japanese page) 
(in English) GaN-based compound semiconductors are attractive for low-loss power switching devices owing to the high breakdown field and the high saturation electron velocity. Conventional AlGaN/GaN HFETs (Heterojunction Field Effect Transistors) have been fabricated on (0001) c-plane across which the spontaneous and piezoelectric polarization fields produce the extraordinary high sheet carrier concentrations. These sheet carriers made it difficult to achieve normally-off operation, which is strongly desired for the safety operation of power switching devices. Use of non-polar (11-20) a-plane is expected to easily achieve the normally-off operation, since the plane is free from the above-mentioned polarization induced charges. In this paper, we report on normally-off operation of non-polar a-plane AlGaN/GaN metal-insulator-semiconductor (MIS)-HFETs with the threshold voltage of +1.3 V. High drain current of 112 mA/mm is also achieved by the recessed MIS-gate structure with the improved crystal quality on thick AlN buffer layers.
Keyword (in Japanese) (See Japanese page) 
(in English) AlGaN/GaN HFET / Non-polar / Normally-off operation / / / / /  
Reference Info. IEICE Tech. Rep., vol. 107, no. 251, ED2007-166, pp. 53-56, Oct. 2007.
Paper # ED2007-166 
Date of Issue 2007-10-04 (ED, CPM, LQE) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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Download PDF ED2007-166 CPM2007-92 LQE2007-67 Link to ES Tech. Rep. Archives: ED2007-166 CPM2007-92 LQE2007-67

Conference Information
Committee CPM ED LQE  
Conference Date 2007-10-11 - 2007-10-12 
Place (in Japanese) (See Japanese page) 
Place (in English) Fukui Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Nitride Based Optical and Electronic Devices, Materials and Related Technologies 
Paper Information
Registration To ED 
Conference Code 2007-10-CPM-ED-LQE 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Normally-off Operation of AlGaN/GaN MIS-HFET on Non-polar (11-20) plane 
Sub Title (in English)  
Keyword(1) AlGaN/GaN HFET  
Keyword(2) Non-polar  
Keyword(3) Normally-off operation  
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1st Author's Name Masayuki Kuroda  
1st Author's Affiliation Matsushita Electric Industrial Co., Ltd. (MEI)
2nd Author's Name Tetsuzo Ueda  
2nd Author's Affiliation Matsushita Electric Industrial Co., Ltd. (MEI)
3rd Author's Name Tsuyoshi Tanaka  
3rd Author's Affiliation Matsushita Electric Industrial Co., Ltd. (MEI)
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Speaker Author-1 
Date Time 2007-10-12 09:25:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2007-166, CPM2007-92, LQE2007-67 
Volume (vol) vol.107 
Number (no) no.251(ED), no.252(CPM), no.253(LQE) 
Page pp.53-56 
#Pages
Date of Issue 2007-10-04 (ED, CPM, LQE) 


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