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Paper Abstract and Keywords
Presentation 2007-11-16 16:10
Characterization and barrier properties of ZrB2 thin films for Cu interconnects
Mayumi B. Takeyama (Kitami Inst. of Technol.), Yasuo Nakadai, Shozo Kambara (ULVAC Materials, Inc.), Masanobu Hatanaka (ULVAC, Inc.), Atsushi Noya (Kitami Inst. of Technol.) CPM2007-111
Abstract (in Japanese) (See Japanese page) 
(in English) The extremely thin diffusion barrier deposited at low temperature is urgently required for reliable Cu
interconnects applicable to 45 nm technology node or beyond. In the present study, we investigated the low-temperature
deposition of the ZrB2 barrier as an attractive material applicable to interconnects process. The thin ZrB2 film is obtained at
the deposition temperatures from room-temperature to 500 ℃, and is thermally stable up to 700 ℃ for 1 h without structural
change. Also, the structure of the ZrB2 film depends on the kinds of substrate, but not on the deposition temperature
examined.
The obtained ZrB2 barrier with 3nm thickness has good barrier properties without structural change and intermixing at every
interface in the Cu/ZrB2(3nm)/SiO2/Si system. We can demonstrate that the ZrB2 film is one of the materials applicable to the
extremely thin barrier of high reliability for Cu metallization technology.
Keyword (in Japanese) (See Japanese page) 
(in English) Cu interconnects / diffusion barrier / ZrB2 / thermal stability / / / /  
Reference Info. IEICE Tech. Rep., vol. 107, no. 325, CPM2007-111, pp. 35-38, Nov. 2007.
Paper # CPM2007-111 
Date of Issue 2007-11-09 (CPM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee CPM  
Conference Date 2007-11-16 - 2007-11-17 
Place (in Japanese) (See Japanese page) 
Place (in English) Nagaoka University of Technology 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Process of Thin Film formation and Materials, etc. 
Paper Information
Registration To CPM 
Conference Code 2007-11-CPM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Characterization and barrier properties of ZrB2 thin films for Cu interconnects 
Sub Title (in English)  
Keyword(1) Cu interconnects  
Keyword(2) diffusion barrier  
Keyword(3) ZrB2  
Keyword(4) thermal stability  
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1st Author's Name Mayumi B. Takeyama  
1st Author's Affiliation Kitami Institute of Technology (Kitami Inst. of Technol.)
2nd Author's Name Yasuo Nakadai  
2nd Author's Affiliation ULVAC Materials, Inc. (ULVAC Materials, Inc.)
3rd Author's Name Shozo Kambara  
3rd Author's Affiliation ULVAC Materials, Inc. (ULVAC Materials, Inc.)
4th Author's Name Masanobu Hatanaka  
4th Author's Affiliation ULVAC, Inc. (ULVAC, Inc.)
5th Author's Name Atsushi Noya  
5th Author's Affiliation Kitami Institute of Technology (Kitami Inst. of Technol.)
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Speaker Author-1 
Date Time 2007-11-16 16:10:00 
Presentation Time 25 minutes 
Registration for CPM 
Paper # CPM2007-111 
Volume (vol) vol.107 
Number (no) no.325 
Page pp.35-38 
#Pages 4 
Date of Issue 2007-11-09 (CPM) 

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