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Paper Abstract and Keywords
Presentation 2007-11-17 14:40
Electrical properties of ZnSnAs2 thin films grown by MBE
Joel T. Asubar, Tadasuke Yokoyama, Yoshio Jinbo, Naotaka Uchitomi (Nagaoka Univ. of Tech.) CPM2007-125
Abstract (in Japanese) (See Japanese page) 
(in English) Ternary ZnSnAs2 thin films were grown on n-type and semi-insulating (001) InP substrates by molecular beam epitaxy using the same grown conditions previously reported. In situ RHEED observations revealed streaky patterns indicating two dimensional growth mode for all the samples. HRXRD and Raman spectroscopy studies suggest the presence of both the chalcopyrite and sphalerite phases. Hall effect measurements in van der Pauw configuration from 5K to RT were then performed on the sample grown on the semi-insulating substrate. Hole concentration of p=5.98´1018 cm-3, hole mobility of m=23.61 cm2/Vs and resistivity of r=4.43´10-2 Ω-cm were obtained at room temperature. We confirmed the presence of a maximum in the Hall coefficient temperature dependence curve at ~130K similar to those reported in bulk chalcopyrite ZnSnAs2, which can be explained by two-band (valence and acceptor bands) model. From the temperature dependence of the valence band hole concentration, the impurity band was calculated to be located at 0.034eV from the valence band edge. Current-voltage measurements on the p-ZnSnAs2/n-InP heterojunction diode revealed I-V curves characteristic of a typical pn-junction.
Keyword (in Japanese) (See Japanese page) 
(in English) ternary semiconductor / MBE / transport properties / van der Pauw / Impurity Band / / /  
Reference Info. IEICE Tech. Rep., vol. 107, no. 325, CPM2007-125, pp. 103-107, Nov. 2007.
Paper # CPM2007-125 
Date of Issue 2007-11-09 (CPM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee CPM  
Conference Date 2007-11-16 - 2007-11-17 
Place (in Japanese) (See Japanese page) 
Place (in English) Nagaoka University of Technology 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Process of Thin Film formation and Materials, etc. 
Paper Information
Registration To CPM 
Conference Code 2007-11-CPM 
Language English (Japanese title is available) 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Electrical properties of ZnSnAs2 thin films grown by MBE 
Sub Title (in English)  
Keyword(1) ternary semiconductor  
Keyword(2) MBE  
Keyword(3) transport properties  
Keyword(4) van der Pauw  
Keyword(5) Impurity Band  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Joel T. Asubar  
1st Author's Affiliation Nagaoka University of Technology (Nagaoka Univ. of Tech.)
2nd Author's Name Tadasuke Yokoyama  
2nd Author's Affiliation Nagaoka University of Technology (Nagaoka Univ. of Tech.)
3rd Author's Name Yoshio Jinbo  
3rd Author's Affiliation Nagaoka University of Technology (Nagaoka Univ. of Tech.)
4th Author's Name Naotaka Uchitomi  
4th Author's Affiliation Nagaoka University of Technology (Nagaoka Univ. of Tech.)
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Speaker Author-1 
Date Time 2007-11-17 14:40:00 
Presentation Time 25 minutes 
Registration for CPM 
Paper # CPM2007-125 
Volume (vol) vol.107 
Number (no) no.325 
Page pp.103-107 
#Pages 5 
Date of Issue 2007-11-09 (CPM) 

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