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Paper Abstract and Keywords
Presentation 2008-04-11 11:50
Application of Si Thin-Film to Photo-Sensor Device
Mitsuharu Tai, Yasutaka Konno, Mutsuko Hatano (CRL, Hitachi), Toshio Miyazawa (Hitachi Displays) SDM2008-7 OME2008-7
Abstract (in Japanese) (See Japanese page) 
(in English) In order to integrate new functions into display panel, thin-film transistor is considered as photo-sensor device, and its photo-induced current is investigated. While the value of photo-induced current in poly-Si TFT is over 20 times as large as the one in a-Si TFT, S/N ratio of a-Si TFT is higher by 30 times of magnitude than that of poly-Si TFT. The relative sensitivity of a-Si TFT more corresponds to the spectral luminous efficiency than that of poly-Si TFT. Simultaneously, poly-Si TFT with offset structure is evaluated to improve S/N ratio and it is increased by 6 times of magnitude. The performance of offset TFT is almost same as PIN diode with poly-Si.
Keyword (in Japanese) (See Japanese page) 
(in English) Photo-Sensor / Thin-Film Transistor / OFFSET Structure / Polycrystalline Silicon / Amorphous Silicon / / /  
Reference Info. IEICE Tech. Rep., vol. 108, no. 1, SDM2008-7, pp. 33-36, April 2008.
Paper # SDM2008-7 
Date of Issue 2008-04-04 (SDM, OME) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2008-7 OME2008-7

Conference Information
Committee SDM OME  
Conference Date 2008-04-11 - 2008-04-12 
Place (in Japanese) (See Japanese page) 
Place (in English) Okinawa Seinen Kaikan 
Topics (in Japanese) (See Japanese page) 
Topics (in English) TFT Materials, Devices, and Applications and Others related to SDM and OME activity 
Paper Information
Registration To SDM 
Conference Code 2008-04-SDM-OME 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Application of Si Thin-Film to Photo-Sensor Device 
Sub Title (in English)  
Keyword(1) Photo-Sensor  
Keyword(2) Thin-Film Transistor  
Keyword(3) OFFSET Structure  
Keyword(4) Polycrystalline Silicon  
Keyword(5) Amorphous Silicon  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Mitsuharu Tai  
1st Author's Affiliation Central Research Lab., Hitachi, Ltd. (CRL, Hitachi)
2nd Author's Name Yasutaka Konno  
2nd Author's Affiliation Central Research Lab., Hitachi, Ltd. (CRL, Hitachi)
3rd Author's Name Mutsuko Hatano  
3rd Author's Affiliation Central Research Lab., Hitachi, Ltd. (CRL, Hitachi)
4th Author's Name Toshio Miyazawa  
4th Author's Affiliation Hitachi Displays (Hitachi Displays)
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Speaker Author-1 
Date Time 2008-04-11 11:50:00 
Presentation Time 25 minutes 
Registration for SDM 
Paper # SDM2008-7, OME2008-7 
Volume (vol) vol.108 
Number (no) no.1(SDM), no.2(OME) 
Page pp.33-36 
#Pages 4 
Date of Issue 2008-04-04 (SDM, OME) 

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