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| Presentation | 2008-04-11 11:50 Application of Si Thin-Film to Photo-Sensor Device Mitsuharu Tai, Yasutaka Konno, Mutsuko Hatano (CRL, Hitachi), Toshio Miyazawa (Hitachi Displays)  SDM2008-7 OME2008-7 Link to ES Tech. Rep. Archives: SDM2008-7 OME2008-7 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | In order to integrate new functions into display panel, thin-film transistor is considered as photo-sensor device, and its photo-induced current is investigated. While the value of photo-induced current in poly-Si TFT is over 20 times as large as the one in a-Si TFT, S/N ratio of a-Si TFT is higher by 30 times of magnitude than that of poly-Si TFT. The relative sensitivity of a-Si TFT more corresponds to the spectral luminous efficiency than that of poly-Si TFT. Simultaneously, poly-Si TFT with offset structure is evaluated to improve S/N ratio and it is increased by 6 times of magnitude. The performance of offset TFT is almost same as PIN diode with poly-Si. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Photo-Sensor / Thin-Film Transistor / OFFSET Structure / Polycrystalline Silicon / Amorphous Silicon / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 108, no. 1, SDM2008-7, pp. 33-36, April 2008. | |
| Paper # | SDM2008-7 | |
| Date of Issue | 2008-04-04 (SDM, OME) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2008-7 OME2008-7 Link to ES Tech. Rep. Archives: SDM2008-7 OME2008-7 |
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| Conference Information | |
| Committee | SDM OME |
| Conference Date | 2008-04-11 - 2008-04-12 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Okinawa Seinen Kaikan |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | TFT Materials, Devices, and Applications and Others related to SDM and OME activity |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2008-04-SDM-OME |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Application of Si Thin-Film to Photo-Sensor Device |
| Sub Title (in English) | |
| Keyword(1) | Photo-Sensor |
| Keyword(2) | Thin-Film Transistor |
| Keyword(3) | OFFSET Structure |
| Keyword(4) | Polycrystalline Silicon |
| Keyword(5) | Amorphous Silicon |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Mitsuharu Tai |
| 1st Author's Affiliation | Central Research Lab., Hitachi, Ltd. (CRL, Hitachi) |
| 2nd Author's Name | Yasutaka Konno |
| 2nd Author's Affiliation | Central Research Lab., Hitachi, Ltd. (CRL, Hitachi) |
| 3rd Author's Name | Mutsuko Hatano |
| 3rd Author's Affiliation | Central Research Lab., Hitachi, Ltd. (CRL, Hitachi) |
| 4th Author's Name | Toshio Miyazawa |
| 4th Author's Affiliation | Hitachi Displays (Hitachi Displays) |
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| Speaker | Author-1 |
| Date Time | 2008-04-11 11:50:00 |
| Presentation Time | 25 minutes |
| Registration for | SDM |
| Paper # | SDM2008-7, OME2008-7 |
| Volume (vol) | vol.108 |
| Number (no) | no.1(SDM), no.2(OME) |
| Page | pp.33-36 |
| #Pages | 4 |
| Date of Issue | 2008-04-04 (SDM, OME) |
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