Paper Abstract and Keywords |
Presentation |
2008-04-11 16:10
Improvement of Interface Property in Pentacene TFT by Atomic Hydrogen Annealing Akira Heya, Masahiko Sato, Hiroshi Hasegawa, Naoto Matsuo (Univ. of Hyogo) SDM2008-13 OME2008-13 Link to ES Tech. Rep. Archives: SDM2008-13 OME2008-13 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
We tried to improve electrical properties of organic thin-film transistors (OTFTs) by atomic hydrogen annealing (AHA). In this method, the gate insulator (SiO2) was exposed to atomic hydrogens generated by cracking of hydrogen molecules on heated tungsten wire. The surface properties of SiO2 were changed by AHA. For the pentacene OTFT fabricated on SiO2/Si substrate, the on/off ratio was improved from 10 to 100 and the threshold voltage was decreased from 65 to 16 V by AHA. It is considered that the negative charges at interface of SiO2 film and Si substrate were removed by atomic hydrogens. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
atomic hydrogen annealing / organic thin film transistor / pentacene / interface property / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 108, no. 1, SDM2008-13, pp. 61-66, April 2008. |
Paper # |
SDM2008-13 |
Date of Issue |
2008-04-04 (SDM, OME) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
SDM2008-13 OME2008-13 Link to ES Tech. Rep. Archives: SDM2008-13 OME2008-13 |
Conference Information |
Committee |
SDM OME |
Conference Date |
2008-04-11 - 2008-04-12 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Okinawa Seinen Kaikan |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
TFT Materials, Devices, and Applications and Others related to SDM and OME activity |
Paper Information |
Registration To |
SDM |
Conference Code |
2008-04-SDM-OME |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Improvement of Interface Property in Pentacene TFT by Atomic Hydrogen Annealing |
Sub Title (in English) |
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Keyword(1) |
atomic hydrogen annealing |
Keyword(2) |
organic thin film transistor |
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pentacene |
Keyword(4) |
interface property |
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1st Author's Name |
Akira Heya |
1st Author's Affiliation |
University of Hyogo (Univ. of Hyogo) |
2nd Author's Name |
Masahiko Sato |
2nd Author's Affiliation |
University of Hyogo (Univ. of Hyogo) |
3rd Author's Name |
Hiroshi Hasegawa |
3rd Author's Affiliation |
University of Hyogo (Univ. of Hyogo) |
4th Author's Name |
Naoto Matsuo |
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University of Hyogo (Univ. of Hyogo) |
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Speaker |
Author-1 |
Date Time |
2008-04-11 16:10:00 |
Presentation Time |
25 minutes |
Registration for |
SDM |
Paper # |
SDM2008-13, OME2008-13 |
Volume (vol) |
vol.108 |
Number (no) |
no.1(SDM), no.2(OME) |
Page |
pp.61-66 |
#Pages |
6 |
Date of Issue |
2008-04-04 (SDM, OME) |
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