Paper Abstract and Keywords |
Presentation |
2008-04-11 10:00
Looking into poly-Si films from TFT characteristics Tadashi Serikawa (Osaka Univ.) SDM2008-3 OME2008-3 Link to ES Tech. Rep. Archives: SDM2008-3 OME2008-3 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Poly-Si TFTs were fabricated from sputtered Si film crystallized by irradiation of Ar-laser at various powers. Electrical characteristics of the poly-Si TFTs were measured at temperature down to 4.2K and applying magnetic field of 1 T and analyzed in details. It was found that poly-Si TFTs with mobility as high as 400 cm2/V.s are obtained even for small grain poly-Si film by controlling fabrication process. It results from formation of grain boundary in poly-Si film with very small dangling bond density. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
TFT / poly-Si film / grain boundary / dangling bonds / grain size / bandtail states / deep states / |
Reference Info. |
IEICE Tech. Rep., vol. 108, no. 1, SDM2008-3, pp. 13-16, April 2008. |
Paper # |
SDM2008-3 |
Date of Issue |
2008-04-04 (SDM, OME) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
SDM2008-3 OME2008-3 Link to ES Tech. Rep. Archives: SDM2008-3 OME2008-3 |
Conference Information |
Committee |
SDM OME |
Conference Date |
2008-04-11 - 2008-04-12 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Okinawa Seinen Kaikan |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
TFT Materials, Devices, and Applications and Others related to SDM and OME activity |
Paper Information |
Registration To |
SDM |
Conference Code |
2008-04-SDM-OME |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Looking into poly-Si films from TFT characteristics |
Sub Title (in English) |
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Keyword(1) |
TFT |
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poly-Si film |
Keyword(3) |
grain boundary |
Keyword(4) |
dangling bonds |
Keyword(5) |
grain size |
Keyword(6) |
bandtail states |
Keyword(7) |
deep states |
Keyword(8) |
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1st Author's Name |
Tadashi Serikawa |
1st Author's Affiliation |
Osaka University (Osaka Univ.) |
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Speaker |
Author-1 |
Date Time |
2008-04-11 10:00:00 |
Presentation Time |
25 minutes |
Registration for |
SDM |
Paper # |
SDM2008-3, OME2008-3 |
Volume (vol) |
vol.108 |
Number (no) |
no.1(SDM), no.2(OME) |
Page |
pp.13-16 |
#Pages |
4 |
Date of Issue |
2008-04-04 (SDM, OME) |
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