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Paper Abstract and Keywords
Presentation 2008-04-11 10:35
Electrical activation of heavily doped Si film by crystallization annealing
Takashi Noguchi, Tomoyuki Miyahira, Kenji Kawai (Univ. Ryukyus), Toshiharu Suzuki, Masateru Sato (SEN) SDM2008-4 OME2008-4 Link to ES Tech. Rep. Archives: SDM2008-4 OME2008-4
Abstract (in Japanese) (See Japanese page) 
(in English) After UV pulsed excimer laser annealing for highly
boron-, or phosphorus dosed Si film, the relationship
between the conductivity and the correlating
crystallinity in the film was analyzed. The crystallinity
and its internal stress were analyzed by using
S.E. (Spectroscopic Ellipsometry) or by Raman
scattering, respectively, for the poly-crystallized Si
film. As a result, the sheet resistance decreased
with improving the crystallinity. By adopting and
optimizing the excimer laser annealing, efficient
solidified activation after melting occurs, the Si film
of 50 nm thickness shows extremely low sheet resistance
below 90 ohm/sq. for the dose of 2E15
cm-2. Even for p-typed case, extremely low sheet
resistance as low as 50 ohm/sq. was obtained for
a B+ dose of 5e15 cm-2. Clear tensile stress was
observed similar to the case of ELC (Excimer Laser
Crystallization) for un-doped Si film. ELA activation
subsequently after ion implantation is considered
to be effective to the formation of source
and drain or Si gate in CMOS TFTs as well as an
electrode for pin sensor diode for SoP (System on
Panel) application.
Keyword (in Japanese) (See Japanese page) 
(in English) ELA / poly-Si / TFT / Raman / S.E. / / /  
Reference Info. IEICE Tech. Rep., vol. 108, no. 1, SDM2008-4, pp. 17-22, April 2008.
Paper # SDM2008-4 
Date of Issue 2008-04-04 (SDM, OME) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2008-4 OME2008-4 Link to ES Tech. Rep. Archives: SDM2008-4 OME2008-4

Conference Information
Committee SDM OME  
Conference Date 2008-04-11 - 2008-04-12 
Place (in Japanese) (See Japanese page) 
Place (in English) Okinawa Seinen Kaikan 
Topics (in Japanese) (See Japanese page) 
Topics (in English) TFT Materials, Devices, and Applications and Others related to SDM and OME activity 
Paper Information
Registration To SDM 
Conference Code 2008-04-SDM-OME 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Electrical activation of heavily doped Si film by crystallization annealing 
Sub Title (in English)  
Keyword(1) ELA  
Keyword(2) poly-Si  
Keyword(3) TFT  
Keyword(4) Raman  
Keyword(5) S.E.  
1st Author's Name Takashi Noguchi  
1st Author's Affiliation University of the Ryukyus (Univ. Ryukyus)
2nd Author's Name Tomoyuki Miyahira  
2nd Author's Affiliation University of the Ryukyus (Univ. Ryukyus)
3rd Author's Name Kenji Kawai  
3rd Author's Affiliation University of the Ryukyus (Univ. Ryukyus)
4th Author's Name Toshiharu Suzuki  
4th Author's Affiliation SEN Corporation an SHI and Axcelis Company (SEN)
5th Author's Name Masateru Sato  
5th Author's Affiliation SEN Corporation an SHI and Axcelis Company (SEN)
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Speaker Author-1 
Date Time 2008-04-11 10:35:00 
Presentation Time 25 minutes 
Registration for SDM 
Paper # SDM2008-4, OME2008-4 
Volume (vol) vol.108 
Number (no) no.1(SDM), no.2(OME) 
Page pp.17-22 
Date of Issue 2008-04-04 (SDM, OME) 

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