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| Presentation | 2008-04-11 13:40 Preparation and Characterization of Thermal Oxidization Anodized Si with a Low-k Dielectric Constant Tomihiro Sonegawa, Kazuhiro Uehara, Takehiro Maehama (Univ. of the Ryukyus)  SDM2008-9 OME2008-9 Link to ES Tech. Rep. Archives: SDM2008-9 OME2008-9 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Low-k dielectric thin film material have been successfully prepared by thermal oxidization using anodized silicon. Anodized silicon layers were prepared using low resistivity n-type silicon single crystal. The anodized silicon layers which porosity was varied anodized current density were oxygenated in the oxygen gas at 1,000 ℃. There is no significant change of the dielectric constant in the frequency range of 500 - 5 MHz. The dielectric constant for the samples with a value of the porosity as 73% by anodized current density as 100 mA/cm2 is typically k = 3.0. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Anodized Silicon / Oxidized Porous Silicon / Low-k material / porosity / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 108, no. 1, SDM2008-9, pp. 41-46, April 2008. | |
| Paper # | SDM2008-9 | |
| Date of Issue | 2008-04-04 (SDM, OME) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2008-9 OME2008-9 Link to ES Tech. Rep. Archives: SDM2008-9 OME2008-9 |
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| Conference Information | |
| Committee | SDM OME |
| Conference Date | 2008-04-11 - 2008-04-12 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Okinawa Seinen Kaikan |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | TFT Materials, Devices, and Applications and Others related to SDM and OME activity |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2008-04-SDM-OME |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Preparation and Characterization of Thermal Oxidization Anodized Si with a Low-k Dielectric Constant |
| Sub Title (in English) | |
| Keyword(1) | Anodized Silicon |
| Keyword(2) | Oxidized Porous Silicon |
| Keyword(3) | Low-k material |
| Keyword(4) | porosity |
| Keyword(5) | |
| Keyword(6) | |
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| Keyword(8) | |
| 1st Author's Name | Tomihiro Sonegawa |
| 1st Author's Affiliation | University of the Ryukyus (Univ. of the Ryukyus) |
| 2nd Author's Name | Kazuhiro Uehara |
| 2nd Author's Affiliation | University of the Ryukyus (Univ. of the Ryukyus) |
| 3rd Author's Name | Takehiro Maehama |
| 3rd Author's Affiliation | University of the Ryukyus (Univ. of the Ryukyus) |
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| Speaker | Author-1 |
| Date Time | 2008-04-11 13:40:00 |
| Presentation Time | 25 minutes |
| Registration for | SDM |
| Paper # | SDM2008-9, OME2008-9 |
| Volume (vol) | vol.108 |
| Number (no) | no.1(SDM), no.2(OME) |
| Page | pp.41-46 |
| #Pages | 6 |
| Date of Issue | 2008-04-04 (SDM, OME) |
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