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Paper Abstract and Keywords
Presentation 2008-04-11 13:40
Preparation and Characterization of Thermal Oxidization Anodized Si with a Low-k Dielectric Constant
Tomihiro Sonegawa, Kazuhiro Uehara, Takehiro Maehama (Univ. of the Ryukyus) SDM2008-9 OME2008-9
Abstract (in Japanese) (See Japanese page) 
(in English) Low-k dielectric thin film material have been successfully prepared by thermal oxidization using anodized silicon. Anodized silicon layers were prepared using low resistivity n-type silicon single crystal. The anodized silicon layers which porosity was varied anodized current density were oxygenated in the oxygen gas at 1,000 ℃. There is no significant change of the dielectric constant in the frequency range of 500 - 5 MHz. The dielectric constant for the samples with a value of the porosity as 73% by anodized current density as 100 mA/cm2 is typically k = 3.0.
Keyword (in Japanese) (See Japanese page) 
(in English) Anodized Silicon / Oxidized Porous Silicon / Low-k material / porosity / / / /  
Reference Info. IEICE Tech. Rep., vol. 108, no. 1, SDM2008-9, pp. 41-46, April 2008.
Paper # SDM2008-9 
Date of Issue 2008-04-04 (SDM, OME) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2008-9 OME2008-9

Conference Information
Committee SDM OME  
Conference Date 2008-04-11 - 2008-04-12 
Place (in Japanese) (See Japanese page) 
Place (in English) Okinawa Seinen Kaikan 
Topics (in Japanese) (See Japanese page) 
Topics (in English) TFT Materials, Devices, and Applications and Others related to SDM and OME activity 
Paper Information
Registration To SDM 
Conference Code 2008-04-SDM-OME 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Preparation and Characterization of Thermal Oxidization Anodized Si with a Low-k Dielectric Constant 
Sub Title (in English)  
Keyword(1) Anodized Silicon  
Keyword(2) Oxidized Porous Silicon  
Keyword(3) Low-k material  
Keyword(4) porosity  
Keyword(5)  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Tomihiro Sonegawa  
1st Author's Affiliation University of the Ryukyus (Univ. of the Ryukyus)
2nd Author's Name Kazuhiro Uehara  
2nd Author's Affiliation University of the Ryukyus (Univ. of the Ryukyus)
3rd Author's Name Takehiro Maehama  
3rd Author's Affiliation University of the Ryukyus (Univ. of the Ryukyus)
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Speaker Author-1 
Date Time 2008-04-11 13:40:00 
Presentation Time 25 minutes 
Registration for SDM 
Paper # SDM2008-9, OME2008-9 
Volume (vol) vol.108 
Number (no) no.1(SDM), no.2(OME) 
Page pp.41-46 
#Pages 6 
Date of Issue 2008-04-04 (SDM, OME) 

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