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Paper Abstract and Keywords
Presentation 2008-04-12 10:35
Formation of Polycrystalline Si Thin Films Using Nanocrystalline Ge Nuclei
Chiaki Yoshimoto, Hiromasa Ohmi, Takayoshi Shimura, Hiroaki Kakiuchi, Heiji Watanabe, Kiyoshi Yasutake (Osaka Univ.) SDM2008-18 OME2008-18
Abstract (in Japanese) (See Japanese page) 
(in English) Large-grained poly-Si thin films are needed for the fabrication of high-performance thin film transistors (TFTs). We have proposed a method to form large-grained poly-Si thin films using nanocrystalline Ge nuclei on glass substrates. Ge nuclei are fabricated by a combination of the solid-phase crystallization (SPC) of a-Ge and the oxygen etching for controlling their size and density. Using this method, a remarkable reduction of crystallization time for a-Si films has been achieved. In this study, we have investigated the crystallization process of a-Si films with Ge nuclei using Raman spectroscopy. It was found that the activation energy for crystallization varies depending on the deposition method of a-Si films. Fourier transform infrared spectroscopy (FTIR) and thermal desorption spectroscopy (TDS) measurements revealed that the crystallization is accelerated when a-Si layer contains a large number of Si-H bonds.
Keyword (in Japanese) (See Japanese page) 
(in English) poly-Si / nanocrystalline Ge / solid phase crystallization / large grain / / / /  
Reference Info. IEICE Tech. Rep., vol. 108, no. 1, SDM2008-18, pp. 89-94, April 2008.
Paper # SDM2008-18 
Date of Issue 2008-04-04 (SDM, OME) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee SDM OME  
Conference Date 2008-04-11 - 2008-04-12 
Place (in Japanese) (See Japanese page) 
Place (in English) Okinawa Seinen Kaikan 
Topics (in Japanese) (See Japanese page) 
Topics (in English) TFT Materials, Devices, and Applications and Others related to SDM and OME activity 
Paper Information
Registration To SDM 
Conference Code 2008-04-SDM-OME 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Formation of Polycrystalline Si Thin Films Using Nanocrystalline Ge Nuclei 
Sub Title (in English)  
Keyword(1) poly-Si  
Keyword(2) nanocrystalline Ge  
Keyword(3) solid phase crystallization  
Keyword(4) large grain  
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Keyword(6)  
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1st Author's Name Chiaki Yoshimoto  
1st Author's Affiliation Osaka University (Osaka Univ.)
2nd Author's Name Hiromasa Ohmi  
2nd Author's Affiliation Osaka University (Osaka Univ.)
3rd Author's Name Takayoshi Shimura  
3rd Author's Affiliation Osaka University (Osaka Univ.)
4th Author's Name Hiroaki Kakiuchi  
4th Author's Affiliation Osaka University (Osaka Univ.)
5th Author's Name Heiji Watanabe  
5th Author's Affiliation Osaka University (Osaka Univ.)
6th Author's Name Kiyoshi Yasutake  
6th Author's Affiliation Osaka University (Osaka Univ.)
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Speaker Author-1 
Date Time 2008-04-12 10:35:00 
Presentation Time 25 minutes 
Registration for SDM 
Paper # SDM2008-18, OME2008-18 
Volume (vol) vol.108 
Number (no) no.1(SDM), no.2(OME) 
Page pp.89-94 
#Pages 6 
Date of Issue 2008-04-04 (SDM, OME) 

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