| IEICE Technical Committee Submission System Conference Paper's Information |
Online Proceedings [Sign in] Tech. Rep. Archives |
| Go Top Page | Go Previous | [Japanese] / [English] |
| Paper Abstract and Keywords | ||
| Presentation | 2008-04-12 10:35 Formation of Polycrystalline Si Thin Films Using Nanocrystalline Ge Nuclei Chiaki Yoshimoto, Hiromasa Ohmi, Takayoshi Shimura, Hiroaki Kakiuchi, Heiji Watanabe, Kiyoshi Yasutake (Osaka Univ.)  SDM2008-18 OME2008-18 Link to ES Tech. Rep. Archives: SDM2008-18 OME2008-18 |
|
| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Large-grained poly-Si thin films are needed for the fabrication of high-performance thin film transistors (TFTs). We have proposed a method to form large-grained poly-Si thin films using nanocrystalline Ge nuclei on glass substrates. Ge nuclei are fabricated by a combination of the solid-phase crystallization (SPC) of a-Ge and the oxygen etching for controlling their size and density. Using this method, a remarkable reduction of crystallization time for a-Si films has been achieved. In this study, we have investigated the crystallization process of a-Si films with Ge nuclei using Raman spectroscopy. It was found that the activation energy for crystallization varies depending on the deposition method of a-Si films. Fourier transform infrared spectroscopy (FTIR) and thermal desorption spectroscopy (TDS) measurements revealed that the crystallization is accelerated when a-Si layer contains a large number of Si-H bonds. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | poly-Si / nanocrystalline Ge / solid phase crystallization / large grain / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 108, no. 1, SDM2008-18, pp. 89-94, April 2008. | |
| Paper # | SDM2008-18 | |
| Date of Issue | 2008-04-04 (SDM, OME) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2008-18 OME2008-18 Link to ES Tech. Rep. Archives: SDM2008-18 OME2008-18 |
|
| Conference Information | |
| Committee | SDM OME |
| Conference Date | 2008-04-11 - 2008-04-12 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Okinawa Seinen Kaikan |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | TFT Materials, Devices, and Applications and Others related to SDM and OME activity |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2008-04-SDM-OME |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Formation of Polycrystalline Si Thin Films Using Nanocrystalline Ge Nuclei |
| Sub Title (in English) | |
| Keyword(1) | poly-Si |
| Keyword(2) | nanocrystalline Ge |
| Keyword(3) | solid phase crystallization |
| Keyword(4) | large grain |
| Keyword(5) | |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Chiaki Yoshimoto |
| 1st Author's Affiliation | Osaka University (Osaka Univ.) |
| 2nd Author's Name | Hiromasa Ohmi |
| 2nd Author's Affiliation | Osaka University (Osaka Univ.) |
| 3rd Author's Name | Takayoshi Shimura |
| 3rd Author's Affiliation | Osaka University (Osaka Univ.) |
| 4th Author's Name | Hiroaki Kakiuchi |
| 4th Author's Affiliation | Osaka University (Osaka Univ.) |
| 5th Author's Name | Heiji Watanabe |
| 5th Author's Affiliation | Osaka University (Osaka Univ.) |
| 6th Author's Name | Kiyoshi Yasutake |
| 6th Author's Affiliation | Osaka University (Osaka Univ.) |
| 7th Author's Name | |
| 7th Author's Affiliation | () |
| 8th Author's Name | |
| 8th Author's Affiliation | () |
| 9th Author's Name | |
| 9th Author's Affiliation | () |
| 10th Author's Name | |
| 10th Author's Affiliation | () |
| 11th Author's Name | |
| 11th Author's Affiliation | () |
| 12th Author's Name | |
| 12th Author's Affiliation | () |
| 13th Author's Name | |
| 13th Author's Affiliation | () |
| 14th Author's Name | |
| 14th Author's Affiliation | () |
| 15th Author's Name | |
| 15th Author's Affiliation | () |
| 16th Author's Name | |
| 16th Author's Affiliation | () |
| 17th Author's Name | |
| 17th Author's Affiliation | () |
| 18th Author's Name | |
| 18th Author's Affiliation | () |
| Speaker | Author-1 |
| Date Time | 2008-04-12 10:35:00 |
| Presentation Time | 25 minutes |
| Registration for | SDM |
| Paper # | SDM2008-18, OME2008-18 |
| Volume (vol) | vol.108 |
| Number (no) | no.1(SDM), no.2(OME) |
| Page | pp.89-94 |
| #Pages | 6 |
| Date of Issue | 2008-04-04 (SDM, OME) |
[Return to Top Page]