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| Presentation | 2008-04-12 10:00 Low-temperature Solid-Phase Crystallization of a-Ge on Glass Substrate for Advanced Thin-Film transistor Isakane Nakao, Kaoru Toko (Kyushu Univ.), Takashi Noguchi (Univ. Ryukyus), Taizoh Sadoh (Kyushu Univ.)  SDM2008-17 OME2008-17 Link to ES Tech. Rep. Archives: SDM2008-17 OME2008-17 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Concentrations and mobilities of intrinsic holes in poly-Ge films grown on quartz substrates were investigated. The Hall measurements of poly-Ge films grown by solid-phase crystallization (SPC) at 425-500 oC without intentional doping revealed that the intrinsic hole concentration decreased with increasing annealing time and became 1x1018 cm-3 after annealing(425 oC-500 min, 500 oC-40 min). For samples grown at 500 oC for >180 min, surface roughening was observed. The hall mobility of sample grown at a low-temperature (425 oC-500 min) was 130 cm2/Vs, which was much higher than that (90 cm2/Vs) of the sample grown at a high-temperature (500 oC-40min). This improvement was due to the larger grain size (~200 nm) for the lower temperature SPC. Moreover, the two-step annealing method, consisting of low-temperature annealing (425 oC-500 min) to obtain large grains and subsequent high-temperature (500 oC-40 min) to decrease defects, was proposed. It was demonstrated that the hole concentration could be decreased to 6x1017 cm-3 with keeping a high-mobility (130 cm2/Vs). In addition, a possibility that an expansive strain (~1 %) was induced in the Ge crystal grains by SPC was suggested. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | solid-phase crystallization / strain-introduction / Ge / thin-film transistor / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 108, no. 1, SDM2008-17, pp. 83-88, April 2008. | |
| Paper # | SDM2008-17 | |
| Date of Issue | 2008-04-04 (SDM, OME) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2008-17 OME2008-17 Link to ES Tech. Rep. Archives: SDM2008-17 OME2008-17 |
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| Conference Information | |
| Committee | SDM OME |
| Conference Date | 2008-04-11 - 2008-04-12 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Okinawa Seinen Kaikan |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | TFT Materials, Devices, and Applications and Others related to SDM and OME activity |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2008-04-SDM-OME |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Low-temperature Solid-Phase Crystallization of a-Ge on Glass Substrate for Advanced Thin-Film transistor |
| Sub Title (in English) | |
| Keyword(1) | solid-phase crystallization |
| Keyword(2) | strain-introduction |
| Keyword(3) | Ge |
| Keyword(4) | thin-film transistor |
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| 1st Author's Name | Isakane Nakao |
| 1st Author's Affiliation | Kyushu University (Kyushu Univ.) |
| 2nd Author's Name | Kaoru Toko |
| 2nd Author's Affiliation | Kyushu University (Kyushu Univ.) |
| 3rd Author's Name | Takashi Noguchi |
| 3rd Author's Affiliation | University of Ryukyus (Univ. Ryukyus) |
| 4th Author's Name | Taizoh Sadoh |
| 4th Author's Affiliation | Kyushu University (Kyushu Univ.) |
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| Speaker | Author-1 |
| Date Time | 2008-04-12 10:00:00 |
| Presentation Time | 25 minutes |
| Registration for | SDM |
| Paper # | SDM2008-17, OME2008-17 |
| Volume (vol) | vol.108 |
| Number (no) | no.1(SDM), no.2(OME) |
| Page | pp.83-88 |
| #Pages | 6 |
| Date of Issue | 2008-04-04 (SDM, OME) |
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