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| Presentation | 2008-10-30 13:00 Preparation and Characterization of CuInS2 Films by Reactive Sputtering Method Takuya Yamaguchi, Nozomu Tsuboi (Niigata Univ.), Koichiro Oishi (Nagaoka Nat. Coll. of Tech.), Satoshi Kobayashi, Futao Kaneko (Niigata Univ.)  CPM2008-75 Link to ES Tech. Rep. Archives: CPM2008-75 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | CuInS2 films with various [Cu]/[In] ratios were deposited on soda lime glass substrates at 450 C by sputtering alternatively Cu and In targets under Ar-diluted CS2 (CS2: 2-5 mTorr) atmosphere. Composition of the films deposited under high and low CS2 pressures corresponded to the (Cu2S,Cu1.96S)-(CuInS2)-(CuIn5S8)-(In2S3) system line and the (Cu2S,Cu1.96S)-(CuInS2)-(InS,In5S4) system line, respectively. The smooth surface films with the stoichiometric composition of CuInS2 exhibited the CuInS2 XRD lines only, and had the absorption edge corresponding to the energy gap of CuInS2 and p-type conductivity. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Thin Film Solar Cell Material / CuInS2 / Reactive Sputtering / Compound Semiconductor / Thin Film / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 108, no. 269, CPM2008-75, pp. 1-6, Oct. 2008. | |
| Paper # | CPM2008-75 | |
| Date of Issue | 2008-10-23 (CPM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | CPM2008-75 Link to ES Tech. Rep. Archives: CPM2008-75 |
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| Conference Information | |
| Committee | CPM |
| Conference Date | 2008-10-30 - 2008-10-31 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Niigata Univ. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Process of Thin Film formation and Materials, etc. |
| Paper Information | |
| Registration To | CPM |
| Conference Code | 2008-10-CPM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Preparation and Characterization of CuInS2 Films by Reactive Sputtering Method |
| Sub Title (in English) | |
| Keyword(1) | Thin Film Solar Cell Material |
| Keyword(2) | CuInS2 |
| Keyword(3) | Reactive Sputtering |
| Keyword(4) | Compound Semiconductor |
| Keyword(5) | Thin Film |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Takuya Yamaguchi |
| 1st Author's Affiliation | Niigata University (Niigata Univ.) |
| 2nd Author's Name | Nozomu Tsuboi |
| 2nd Author's Affiliation | Niigata University (Niigata Univ.) |
| 3rd Author's Name | Koichiro Oishi |
| 3rd Author's Affiliation | Nagaoka National College of Technology (Nagaoka Nat. Coll. of Tech.) |
| 4th Author's Name | Satoshi Kobayashi |
| 4th Author's Affiliation | Niigata University (Niigata Univ.) |
| 5th Author's Name | Futao Kaneko |
| 5th Author's Affiliation | Niigata University (Niigata Univ.) |
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| Speaker | Author-1 |
| Date Time | 2008-10-30 13:00:00 |
| Presentation Time | 25 minutes |
| Registration for | CPM |
| Paper # | CPM2008-75 |
| Volume (vol) | vol.108 |
| Number (no) | no.269 |
| Page | pp.1-6 |
| #Pages | 6 |
| Date of Issue | 2008-10-23 (CPM) |
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