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| Presentation | 2009-05-14 15:50 A proposal for Highly Transparent Chalcogenide Alloys for Thin-Film-Solar-Cell Applications Asraf M. Abdel Haleem, Masaya Ichimura (Nagoya Inst. of Tech.)  ED2009-23 CPM2009-13 SDM2009-13 Link to ES Tech. Rep. Archives: ED2009-23 CPM2009-13 SDM2009-13 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Gallium-Indium-sulfide-oxide thin films were deposited onto F-doped SnO2-coated glass by electrochemical deposition from an aqueous bath. The films were deposited at three different ratios of gallium to indium in the precursor bath; namely [Ga/In]=2/8, 5/5 and 8/2. The impact of the gallium content on the composition, optical transmission, structure, photosensitivity and morphology of the deposited films was investigated. The films deposited at [Ga/In]= 5/5 and 8/2 had energy gap as high as 3.5 eV. The X-ray diffraction spectrum of the film deposited at [Ga/In]=2/8 contained weak peaks of indium metal, but the In peaks were absent in the spectra of the films deposited at [Ga/In]=5/5 and 8/2. The photosensitivity of the film was observed by means of photoelectrochemical measurements, which confirmed that all the films showed n-type conduction. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | gallium indium sulfide / thin films / electrochemical deposition / solar cell / buffer layer / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 109, no. 24, CPM2009-13, pp. 25-30, May 2009. | |
| Paper # | CPM2009-13 | |
| Date of Issue | 2009-05-07 (ED, CPM, SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2009-23 CPM2009-13 SDM2009-13 Link to ES Tech. Rep. Archives: ED2009-23 CPM2009-13 SDM2009-13 |
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| Conference Information | |
| Committee | ED CPM SDM |
| Conference Date | 2009-05-14 - 2009-05-15 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Satellite Office, Toyohashi Univ. of Technology |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Crystal growth, evaluation and device (Compound, Si, SiGe, Electronic and light emitting materials） |
| Paper Information | |
| Registration To | CPM |
| Conference Code | 2009-05-ED-CPM-SDM |
| Language | English |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | A proposal for Highly Transparent Chalcogenide Alloys for Thin-Film-Solar-Cell Applications |
| Sub Title (in English) | |
| Keyword(1) | gallium indium sulfide |
| Keyword(2) | thin films |
| Keyword(3) | electrochemical deposition |
| Keyword(4) | solar cell |
| Keyword(5) | buffer layer |
| Keyword(6) | |
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| Keyword(8) | |
| 1st Author's Name | Asraf M. Abdel Haleem |
| 1st Author's Affiliation | Nagoya Institute of Technology (Nagoya Inst. of Tech.) |
| 2nd Author's Name | Masaya Ichimura |
| 2nd Author's Affiliation | Nagoya Institute of Technology (Nagoya Inst. of Tech.) |
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| Speaker | Author-1 |
| Date Time | 2009-05-14 15:50:00 |
| Presentation Time | 25 minutes |
| Registration for | CPM |
| Paper # | ED2009-23, CPM2009-13, SDM2009-13 |
| Volume (vol) | vol.109 |
| Number (no) | no.23(ED), no.24(CPM), no.25(SDM) |
| Page | pp.25-30 |
| #Pages | 6 |
| Date of Issue | 2009-05-07 (ED, CPM, SDM) |
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