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Paper Abstract and Keywords
Presentation 2009-05-14 15:50
A proposal for Highly Transparent Chalcogenide Alloys for Thin-Film-Solar-Cell Applications
Asraf M. Abdel Haleem, Masaya Ichimura (Nagoya Inst. of Tech.) ED2009-23 CPM2009-13 SDM2009-13
Abstract (in Japanese) (See Japanese page) 
(in English) Gallium-Indium-sulfide-oxide thin films were deposited onto F-doped SnO2-coated glass by electrochemical deposition from an aqueous bath. The films were deposited at three different ratios of gallium to indium in the precursor bath; namely [Ga/In]=2/8, 5/5 and 8/2. The impact of the gallium content on the composition, optical transmission, structure, photosensitivity and morphology of the deposited films was investigated. The films deposited at [Ga/In]= 5/5 and 8/2 had energy gap as high as 3.5 eV. The X-ray diffraction spectrum of the film deposited at [Ga/In]=2/8 contained weak peaks of indium metal, but the In peaks were absent in the spectra of the films deposited at [Ga/In]=5/5 and 8/2. The photosensitivity of the film was observed by means of photoelectrochemical measurements, which confirmed that all the films showed n-type conduction.
Keyword (in Japanese) (See Japanese page) 
(in English) gallium indium sulfide / thin films / electrochemical deposition / solar cell / buffer layer / / /  
Reference Info. IEICE Tech. Rep., vol. 109, no. 24, CPM2009-13, pp. 25-30, May 2009.
Paper # CPM2009-13 
Date of Issue 2009-05-07 (ED, CPM, SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2009-23 CPM2009-13 SDM2009-13

Conference Information
Committee ED CPM SDM  
Conference Date 2009-05-14 - 2009-05-15 
Place (in Japanese) (See Japanese page) 
Place (in English) Satellite Office, Toyohashi Univ. of Technology 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Crystal growth, evaluation and device (Compound, Si, SiGe, Electronic and light emitting materials） 
Paper Information
Registration To CPM 
Conference Code 2009-05-ED-CPM-SDM 
Language English 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) A proposal for Highly Transparent Chalcogenide Alloys for Thin-Film-Solar-Cell Applications 
Sub Title (in English)  
Keyword(1) gallium indium sulfide  
Keyword(2) thin films  
Keyword(3) electrochemical deposition  
Keyword(4) solar cell  
Keyword(5) buffer layer  
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Keyword(8)  
1st Author's Name Asraf M. Abdel Haleem  
1st Author's Affiliation Nagoya Institute of Technology (Nagoya Inst. of Tech.)
2nd Author's Name Masaya Ichimura  
2nd Author's Affiliation Nagoya Institute of Technology (Nagoya Inst. of Tech.)
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Speaker Author-1 
Date Time 2009-05-14 15:50:00 
Presentation Time 25 minutes 
Registration for CPM 
Paper # ED2009-23, CPM2009-13, SDM2009-13 
Volume (vol) vol.109 
Number (no) no.23(ED), no.24(CPM), no.25(SDM) 
Page pp.25-30 
#Pages 6 
Date of Issue 2009-05-07 (ED, CPM, SDM) 

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