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Paper Abstract and Keywords
Presentation 2009-05-15 10:30
Growth of GaP on Si Substrates at High Temperature by MOVPE
Tatsuya Takagi, Takuya Okamoto, Shunro Fuke, Yasushi Takano (Shizuoka Univ.) ED2009-29 CPM2009-19 SDM2009-19
Abstract (in Japanese) (See Japanese page) 
(in English) GaP was grown on misoriented Si substrates using metalorganic vapor phase epitaxy (MOVPE). At 700 and 800℃,no mirror suface was obtained. A mirror suface was achieved at 830℃ with a high PH3 flow rate. A cross-hatched pattern (CHP) was observed for a 200-nm-thick GaP layer grown at 830℃. The CHP indicates that the quality of the GaP layer was high. Cross-sectional transmission electron microscopy reveals that few stacking faults and dislocations exist in 5-and 40-nm-thick GaP layers on Si substrates.
Keyword (in Japanese) (See Japanese page) 
(in English) MOVPE / GaP / CHP / TEM / / / /  
Reference Info. IEICE Tech. Rep., vol. 109, no. 24, CPM2009-19, pp. 59-64, May 2009.
Paper # CPM2009-19 
Date of Issue 2009-05-07 (ED, CPM, SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2009-29 CPM2009-19 SDM2009-19

Conference Information
Committee ED CPM SDM  
Conference Date 2009-05-14 - 2009-05-15 
Place (in Japanese) (See Japanese page) 
Place (in English) Satellite Office, Toyohashi Univ. of Technology 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Crystal growth, evaluation and device (Compound, Si, SiGe, Electronic and light emitting materials） 
Paper Information
Registration To CPM 
Conference Code 2009-05-ED-CPM-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Growth of GaP on Si Substrates at High Temperature by MOVPE 
Sub Title (in English)  
Keyword(1) MOVPE  
Keyword(2) GaP  
Keyword(3) CHP  
Keyword(4) TEM  
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Keyword(6)  
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1st Author's Name Tatsuya Takagi  
1st Author's Affiliation Shizuoka University (Shizuoka Univ.)
2nd Author's Name Takuya Okamoto  
2nd Author's Affiliation Shizuoka University (Shizuoka Univ.)
3rd Author's Name Shunro Fuke  
3rd Author's Affiliation Shizuoka University (Shizuoka Univ.)
4th Author's Name Yasushi Takano  
4th Author's Affiliation Shizuoka University (Shizuoka Univ.)
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Speaker Author-1 
Date Time 2009-05-15 10:30:00 
Presentation Time 25 minutes 
Registration for CPM 
Paper # ED2009-29, CPM2009-19, SDM2009-19 
Volume (vol) vol.109 
Number (no) no.23(ED), no.24(CPM), no.25(SDM) 
Page pp.59-64 
#Pages 6 
Date of Issue 2009-05-07 (ED, CPM, SDM) 

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