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Paper Abstract and Keywords
Presentation 2009-10-29 14:30
A study on Improvement of Thermal Stability for PtSi Alloying with Hf Utilizing Two-Step Silicidation Process
Jun Gao, Jumpei Ishikawa, Shun-ichiro Ohmi (Tokyo Inst. of Tech.) SDM2009-118
Abstract (in Japanese) (See Japanese page) 
(in English) To improve the thermal stability of PtxHfySi formed at 400℃/60 min, 2-step silicidation process was investigated. By using a rapid thermal annealing (RTA) system, the Pt/Hf/n-Si(100) stacked layers were annealed at 400℃for 60 min and then re- annealed at 550-750℃ for 1 min in a flowing N2 ambient to form silicide layer. In the case of silicide layer formed at 400℃/60 min, it was found that sheet resistance deteriorated to 30-40 Ω/sq and barrier height became 0.75 eV at the temperature of 550℃ or higher. On the other hand, In the case of PtxHfySi formed at 2-step silicidation, it was found that barrier height is kept at 0.65 eV and low sheet resistance (30 /sq) is obtained, even after 700℃ re-anneal.
Keyword (in Japanese) (See Japanese page) 
(in English) PtSi / Monosilicide / Alloy / Barrier Height / Workfunction / Sheet resistance / 2-step silicidation /  
Reference Info. IEICE Tech. Rep., vol. 109, no. 257, SDM2009-118, pp. 7-10, Oct. 2009.
Paper # SDM2009-118 
Date of Issue 2009-10-22 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee SDM  
Conference Date 2009-10-29 - 2009-10-30 
Place (in Japanese) (See Japanese page) 
Place (in English) Tohoku University 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Semiconductor process science and new technology 
Paper Information
Registration To SDM 
Conference Code 2009-10-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) A study on Improvement of Thermal Stability for PtSi Alloying with Hf Utilizing Two-Step Silicidation Process 
Sub Title (in English)  
Keyword(1) PtSi  
Keyword(2) Monosilicide  
Keyword(3) Alloy  
Keyword(4) Barrier Height  
Keyword(5) Workfunction  
Keyword(6) Sheet resistance  
Keyword(7) 2-step silicidation  
Keyword(8)  
1st Author's Name Jun Gao  
1st Author's Affiliation Tokyo Institute of Technology (Tokyo Inst. of Tech.)
2nd Author's Name Jumpei Ishikawa  
2nd Author's Affiliation Tokyo Institute of Technology (Tokyo Inst. of Tech.)
3rd Author's Name Shun-ichiro Ohmi  
3rd Author's Affiliation Tokyo Institute of Technology (Tokyo Inst. of Tech.)
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Speaker Author-1 
Date Time 2009-10-29 14:30:00 
Presentation Time 30 minutes 
Registration for SDM 
Paper # SDM2009-118 
Volume (vol) vol.109 
Number (no) no.257 
Page pp.7-10 
#Pages 4 
Date of Issue 2009-10-22 (SDM) 

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