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Paper Abstract and Keywords
Presentation 2009-10-30 15:15
Oxy-nitridation Simulation of Silicon Surface Using Antomated System of Ultra-Accelerated Quantum Chemical Molecular Dynamics Method
Hideyuki Tsuboi, Ai Suzuki, Nozomu Hatakeyama, Akira Endou, Hiromitsu Takaba, Momoji Kubo, Akira Miyamoto (Tohoku Univ.) SDM2009-133
Abstract (in Japanese) (See Japanese page) 
(in English) Using our newly developed automated system of ultra-accelerated quantum chemical molecular dynamics method, we have investigated the initial process for oxydation and oxy-nitridation reaction of silicon clean surface. In this report, we have analyzed the behavior of O2 molecules and NO molecule during the surface chemical reaction and the change of atomic charges and the binding energies.
Keyword (in Japanese) (See Japanese page) 
(in English) Silicon surface / Oxy-nitride film / NO molecule / O2 molecule / Simulation / Automated system / Ultra accelerated quantum chemical molecular dynamics method /  
Reference Info. IEICE Tech. Rep., vol. 109, no. 257, SDM2009-133, pp. 75-76, Oct. 2009.
Paper # SDM2009-133 
Date of Issue 2009-10-22 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee SDM  
Conference Date 2009-10-29 - 2009-10-30 
Place (in Japanese) (See Japanese page) 
Place (in English) Tohoku University 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Semiconductor process science and new technology 
Paper Information
Registration To SDM 
Conference Code 2009-10-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Oxy-nitridation Simulation of Silicon Surface Using Antomated System of Ultra-Accelerated Quantum Chemical Molecular Dynamics Method 
Sub Title (in English)  
Keyword(1) Silicon surface  
Keyword(2) Oxy-nitride film  
Keyword(3) NO molecule  
Keyword(4) O2 molecule  
Keyword(5) Simulation  
Keyword(6) Automated system  
Keyword(7) Ultra accelerated quantum chemical molecular dynamics method  
Keyword(8)  
1st Author's Name Hideyuki Tsuboi  
1st Author's Affiliation tohoku university (Tohoku Univ.)
2nd Author's Name Ai Suzuki  
2nd Author's Affiliation tohoku university (Tohoku Univ.)
3rd Author's Name Nozomu Hatakeyama  
3rd Author's Affiliation tohoku university (Tohoku Univ.)
4th Author's Name Akira Endou  
4th Author's Affiliation tohoku university (Tohoku Univ.)
5th Author's Name Hiromitsu Takaba  
5th Author's Affiliation tohoku university (Tohoku Univ.)
6th Author's Name Momoji Kubo  
6th Author's Affiliation tohoku university (Tohoku Univ.)
7th Author's Name Akira Miyamoto  
7th Author's Affiliation tohoku university (Tohoku Univ.)
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Speaker Author-1 
Date Time 2009-10-30 15:15:00 
Presentation Time 30 minutes 
Registration for SDM 
Paper # SDM2009-133 
Volume (vol) vol.109 
Number (no) no.257 
Page pp.75-76 
#Pages 2 
Date of Issue 2009-10-22 (SDM) 

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