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Paper Abstract and Keywords
Presentation 2010-02-22 16:05
Fabrication of Planar-Type Ferromagnetic Tunnel Junctions Using Field-Emission-Induced Electromigration
Kazutoshi Takiya, Yusuke Tomoda, Takato Watanabe, Watari Kume, Shunsuke Ueno, Jun-ichi Shirakashi (Tokyo Univ. of Agr. & Tech) ED2009-203 SDM2009-200
Abstract (in Japanese) (See Japanese page) 
(in English) We study nanometer-sized spintronic devices with ferromagnetic tunnel junctions. Tunnel magnetoresitance (TMR) observed in the devices has been extensively investigated both experimentally and theoretically. Here, we fabricated planar-type Ni-vacuum-Ni ferromagnetic tunnel junctions, whose geometry is asymmetrically butterfly-shaped for inducing the magnetic shape anisotropy, using field-emission-induced electromigration (so-called “activation”). In the activation method, we were simply and easily able to control the tunnel resitance from 1.6 MΩ to 169 kΩ by only adjusting the magnitude of field emission current, resulting in a decrease of the initial nanogap separation from approximately 40 nm to less than 10 nm. Therefore, the activation technique is most important for the formation of planar-type Ni-vaccum-Ni ferromagnetic tunnel junctions. The resistance of the junctions formed by the activation was varied by external magnetic fields, and the magnetoresistance (MR) ratio of approximately 12.2 % was obtained at 16 K with the bias voltage of 0.72 mV. With increasing the bias voltage from 0.72 to 7.3 mV, the MR ratio decreased from 12.2 to 6.2 %. When the applied bias voltage was fixed at 1.6 mV, the MR ratio also decreased from 11.6 % to 1.2 % with increasing the measurement temperature from 16 to 270 K. These results strongly suggest that activation method can be useful to easily fabricate planar-type ferromagnetic tunnel junctions.
Keyword (in Japanese) (See Japanese page) 
(in English) eletromigration / field emission current / ferromagnetic tunnel junction / magnetoresistance / / / /  
Reference Info. IEICE Tech. Rep., vol. 109, no. 422, ED2009-203, pp. 41-45, Feb. 2010.
Paper # ED2009-203 
Date of Issue 2010-02-15 (ED, SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2009-203 SDM2009-200

Conference Information
Committee ED SDM  
Conference Date 2010-02-22 - 2010-02-23 
Place (in Japanese) (See Japanese page) 
Place (in English) Okinawaken-Seinen-Kaikan 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Functional Nano Device and Related Technology 
Paper Information
Registration To ED 
Conference Code 2010-02-ED-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Fabrication of Planar-Type Ferromagnetic Tunnel Junctions Using Field-Emission-Induced Electromigration 
Sub Title (in English)  
Keyword(1) eletromigration  
Keyword(2) field emission current  
Keyword(3) ferromagnetic tunnel junction  
Keyword(4) magnetoresistance  
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Keyword(6)  
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1st Author's Name Kazutoshi Takiya  
1st Author's Affiliation Tokyo University of Agriculture and Technology (Tokyo Univ. of Agr. & Tech)
2nd Author's Name Yusuke Tomoda  
2nd Author's Affiliation Tokyo University of Agriculture and Technology (Tokyo Univ. of Agr. & Tech)
3rd Author's Name Takato Watanabe  
3rd Author's Affiliation Tokyo University of Agriculture and Technology (Tokyo Univ. of Agr. & Tech)
4th Author's Name Watari Kume  
4th Author's Affiliation Tokyo University of Agriculture and Technology (Tokyo Univ. of Agr. & Tech)
5th Author's Name Shunsuke Ueno  
5th Author's Affiliation Tokyo University of Agriculture and Technology (Tokyo Univ. of Agr. & Tech)
6th Author's Name Jun-ichi Shirakashi  
6th Author's Affiliation Tokyo University of Agriculture and Technology (Tokyo Univ. of Agr. & Tech)
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Speaker Author-1 
Date Time 2010-02-22 16:05:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2009-203, SDM2009-200 
Volume (vol) vol.109 
Number (no) no.422(ED), no.423(SDM) 
Page pp.41-45 
#Pages 5 
Date of Issue 2010-02-15 (ED, SDM) 

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