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Paper Abstract and Keywords
Presentation 2010-02-22 13:25
Seebeck coefficient in heavily-doped SOI layers
Hiroya Ikeda, Faiz Salleh (Shizuoka Univ.) ED2009-197 SDM2009-194
Abstract (in Japanese) (See Japanese page) 
(in English) We have investigated the Seebeck coefficient of Si nanostructures, especially, ultrathin P-doped SOI (silicon-on-insulator) layers. The dependence of the Seebeck coefficient on the carrier concentration was shown to be in good agreement with that of bulk Si for SOI thicknesses above 6 nm. The Seebeck coefficient decreased with increasing P concentration, and with a peak of the Seebeck coefficient around 5x10^19cm^-3. We calculated the density-of-states (DOS) of bulk Si based on theoretical models of impurity-band formation, ionization-energy shift and conduction-band tailing. The calculated impurity-concentration dependence of the energy derivative of the DOS at the Fermi energy also showed a peak. Consequently, the Seebeck coefficient of the heavily-doped Si is ruled by the DOS distribution, similar to metallic materials.
Keyword (in Japanese) (See Japanese page) 
(in English) thermoelectricity / nanostructure / SOI wafer / Seebeck coefficient / impurity band / / /  
Reference Info. IEICE Tech. Rep., vol. 109, no. 423, SDM2009-194, pp. 5-9, Feb. 2010.
Paper # SDM2009-194 
Date of Issue 2010-02-15 (ED, SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2009-197 SDM2009-194

Conference Information
Committee ED SDM  
Conference Date 2010-02-22 - 2010-02-23 
Place (in Japanese) (See Japanese page) 
Place (in English) Okinawaken-Seinen-Kaikan 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Functional Nano Device and Related Technology 
Paper Information
Registration To SDM 
Conference Code 2010-02-ED-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Seebeck coefficient in heavily-doped SOI layers 
Sub Title (in English)  
Keyword(1) thermoelectricity  
Keyword(2) nanostructure  
Keyword(3) SOI wafer  
Keyword(4) Seebeck coefficient  
Keyword(5) impurity band  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Hiroya Ikeda  
1st Author's Affiliation Shizuoka University (Shizuoka Univ.)
2nd Author's Name Faiz Salleh  
2nd Author's Affiliation Shizuoka University (Shizuoka Univ.)
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Speaker Author-1 
Date Time 2010-02-22 13:25:00 
Presentation Time 25 minutes 
Registration for SDM 
Paper # ED2009-197, SDM2009-194 
Volume (vol) vol.109 
Number (no) no.422(ED), no.423(SDM) 
Page pp.5-9 
#Pages 5 
Date of Issue 2010-02-15 (ED, SDM) 

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