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Paper Abstract and Keywords
Presentation 2010-02-23 12:25
Nonvolatile memory based on carbon nanotube field-effect transistors
Kenzo Maehashi, Takahiro Ohori, Satoshi Nagaso, Koichi Inoue, Kazuhiko Matsumoto (Osaka Univ.) ED2009-211 SDM2009-208 Link to ES Tech. Rep. Archives: ED2009-211 SDM2009-208
Abstract (in Japanese) (See Japanese page) 
(in English) We have fabricated nonvolatile memory based on top-gated carbon nanotube field-effect transistors (CNTFETs). Two kinds of insulating films of SiNx and SiO2 were deposited to control the hysteresis characteristics after removal of water molecules around SWNT channels. The interface between SiNx and SiO2 films is expected as a charge storage node of nonvolatile memory. The fabricated CNTFET-based memory devices clearly exhibited not only memory effect but also good retention characteristics for charge storage. Furthermore, single-hole charging and discharging phenomena were clearly observed in CNTFET-based memory devices by reducing the number of carries trapped in the interface between SiNx and SiO2. These results indicate that the CNTFET-based nonvolatile memory is one of candidates for fabrication of single-electron memory.
Keyword (in Japanese) (See Japanese page) 
(in English) Carbon nanotubes / Field-effect transistors / Nonvolatile memory / Single-hole trap / / / /  
Reference Info. IEICE Tech. Rep., vol. 109, no. 422, ED2009-211, pp. 87-91, Feb. 2010.
Paper # ED2009-211 
Date of Issue 2010-02-15 (ED, SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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Download PDF ED2009-211 SDM2009-208 Link to ES Tech. Rep. Archives: ED2009-211 SDM2009-208

Conference Information
Committee ED SDM  
Conference Date 2010-02-22 - 2010-02-23 
Place (in Japanese) (See Japanese page) 
Place (in English) Okinawaken-Seinen-Kaikan 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Functional Nano Device and Related Technology 
Paper Information
Registration To ED 
Conference Code 2010-02-ED-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Nonvolatile memory based on carbon nanotube field-effect transistors 
Sub Title (in English)  
Keyword(1) Carbon nanotubes  
Keyword(2) Field-effect transistors  
Keyword(3) Nonvolatile memory  
Keyword(4) Single-hole trap  
1st Author's Name Kenzo Maehashi  
1st Author's Affiliation Osaka University (Osaka Univ.)
2nd Author's Name Takahiro Ohori  
2nd Author's Affiliation Osaka University (Osaka Univ.)
3rd Author's Name Satoshi Nagaso  
3rd Author's Affiliation Osaka University (Osaka Univ.)
4th Author's Name Koichi Inoue  
4th Author's Affiliation Osaka University (Osaka Univ.)
5th Author's Name Kazuhiko Matsumoto  
5th Author's Affiliation Osaka University (Osaka Univ.)
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Speaker Author-1 
Date Time 2010-02-23 12:25:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2009-211, SDM2009-208 
Volume (vol) vol.109 
Number (no) no.422(ED), no.423(SDM) 
Page pp.87-91 
Date of Issue 2010-02-15 (ED, SDM) 

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