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| Presentation | 2010-02-23 12:25 Nonvolatile memory based on carbon nanotube field-effect transistors Kenzo Maehashi, Takahiro Ohori, Satoshi Nagaso, Koichi Inoue, Kazuhiko Matsumoto (Osaka Univ.)  ED2009-211 SDM2009-208 Link to ES Tech. Rep. Archives: ED2009-211 SDM2009-208 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | We have fabricated nonvolatile memory based on top-gated carbon nanotube field-effect transistors (CNTFETs). Two kinds of insulating films of SiNx and SiO2 were deposited to control the hysteresis characteristics after removal of water molecules around SWNT channels. The interface between SiNx and SiO2 films is expected as a charge storage node of nonvolatile memory. The fabricated CNTFET-based memory devices clearly exhibited not only memory effect but also good retention characteristics for charge storage. Furthermore, single-hole charging and discharging phenomena were clearly observed in CNTFET-based memory devices by reducing the number of carries trapped in the interface between SiNx and SiO2. These results indicate that the CNTFET-based nonvolatile memory is one of candidates for fabrication of single-electron memory. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Carbon nanotubes / Field-effect transistors / Nonvolatile memory / Single-hole trap / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 109, no. 422, ED2009-211, pp. 87-91, Feb. 2010. | |
| Paper # | ED2009-211 | |
| Date of Issue | 2010-02-15 (ED, SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2009-211 SDM2009-208 Link to ES Tech. Rep. Archives: ED2009-211 SDM2009-208 |
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| Conference Information | |
| Committee | ED SDM |
| Conference Date | 2010-02-22 - 2010-02-23 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Okinawaken-Seinen-Kaikan |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Functional Nano Device and Related Technology |
| Paper Information | |
| Registration To | ED |
| Conference Code | 2010-02-ED-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Nonvolatile memory based on carbon nanotube field-effect transistors |
| Sub Title (in English) | |
| Keyword(1) | Carbon nanotubes |
| Keyword(2) | Field-effect transistors |
| Keyword(3) | Nonvolatile memory |
| Keyword(4) | Single-hole trap |
| Keyword(5) | |
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| 1st Author's Name | Kenzo Maehashi |
| 1st Author's Affiliation | Osaka University (Osaka Univ.) |
| 2nd Author's Name | Takahiro Ohori |
| 2nd Author's Affiliation | Osaka University (Osaka Univ.) |
| 3rd Author's Name | Satoshi Nagaso |
| 3rd Author's Affiliation | Osaka University (Osaka Univ.) |
| 4th Author's Name | Koichi Inoue |
| 4th Author's Affiliation | Osaka University (Osaka Univ.) |
| 5th Author's Name | Kazuhiko Matsumoto |
| 5th Author's Affiliation | Osaka University (Osaka Univ.) |
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| Speaker | Author-1 |
| Date Time | 2010-02-23 12:25:00 |
| Presentation Time | 25 minutes |
| Registration for | ED |
| Paper # | ED2009-211, SDM2009-208 |
| Volume (vol) | vol.109 |
| Number (no) | no.422(ED), no.423(SDM) |
| Page | pp.87-91 |
| #Pages | 5 |
| Date of Issue | 2010-02-15 (ED, SDM) |
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