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| Presentation | 2010-02-23 10:10 CMOS inverters based on carbon nanotube field-effect transistors with SiNx passivation films Takaomi Kishimoto, Yasuhide Ohno, Kenzo Maehashi, Koichi Inoue, Kazuhiko Matsumoto (ISIR, Osaka Univ.)  ED2009-206 SDM2009-203 Link to ES Tech. Rep. Archives: ED2009-206 SDM2009-203 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | We have demonstrated logic gates based on complementary carbon nanotube field-effect transistors (CNT-FETs) with SiNx passivation films deposited by catalytic chemical vapor deposition. Carrier types in CNT-FETs were controlled by forming SiNx passivation film. Electrical measurements reveal that the p-type characteristics of CNT-FETs were converted to n-type after deposition of SiNx passivation films. Then, the n-type CNT-FETs with SiNx passivation films were reconverted to p-type by annealing in N2 atmosphere. As a consequence, the complementary voltage inverters comprising the p-type and n-type CNT-FETs with SiNx passivation film were demonstrated on the same SiO2 substrate by conventional photolithography and lift-off techniques. Moreover, static transfer and dynamic characteristics in the CNT-FET-based inverters were investigated, indicating that the gain of approximately three was achieved and that the device was switched properly at frequencies up to 100 Hz. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Carbon nanotube / Field-Effect Transistor / CMOS inverter / Cat-CVD / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 109, no. 422, ED2009-206, pp. 59-63, Feb. 2010. | |
| Paper # | ED2009-206 | |
| Date of Issue | 2010-02-15 (ED, SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2009-206 SDM2009-203 Link to ES Tech. Rep. Archives: ED2009-206 SDM2009-203 |
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| Conference Information | |
| Committee | ED SDM |
| Conference Date | 2010-02-22 - 2010-02-23 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Okinawaken-Seinen-Kaikan |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Functional Nano Device and Related Technology |
| Paper Information | |
| Registration To | ED |
| Conference Code | 2010-02-ED-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | CMOS inverters based on carbon nanotube field-effect transistors with SiNx passivation films |
| Sub Title (in English) | |
| Keyword(1) | Carbon nanotube |
| Keyword(2) | Field-Effect Transistor |
| Keyword(3) | CMOS inverter |
| Keyword(4) | Cat-CVD |
| Keyword(5) | |
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| 1st Author's Name | Takaomi Kishimoto |
| 1st Author's Affiliation | The institute of scientific and industrial research, Osaka University (ISIR, Osaka Univ.) |
| 2nd Author's Name | Yasuhide Ohno |
| 2nd Author's Affiliation | The institute of scientific and industrial research, Osaka University (ISIR, Osaka Univ.) |
| 3rd Author's Name | Kenzo Maehashi |
| 3rd Author's Affiliation | The institute of scientific and industrial research, Osaka University (ISIR, Osaka Univ.) |
| 4th Author's Name | Koichi Inoue |
| 4th Author's Affiliation | The institute of scientific and industrial research, Osaka University (ISIR, Osaka Univ.) |
| 5th Author's Name | Kazuhiko Matsumoto |
| 5th Author's Affiliation | The institute of scientific and industrial research, Osaka University (ISIR, Osaka Univ.) |
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| Speaker | Author-1 |
| Date Time | 2010-02-23 10:10:00 |
| Presentation Time | 25 minutes |
| Registration for | ED |
| Paper # | ED2009-206, SDM2009-203 |
| Volume (vol) | vol.109 |
| Number (no) | no.422(ED), no.423(SDM) |
| Page | pp.59-63 |
| #Pages | 5 |
| Date of Issue | 2010-02-15 (ED, SDM) |
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