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Paper Abstract and Keywords
Presentation 2010-02-23 10:10
CMOS inverters based on carbon nanotube field-effect transistors with SiNx passivation films
Takaomi Kishimoto, Yasuhide Ohno, Kenzo Maehashi, Koichi Inoue, Kazuhiko Matsumoto (ISIR, Osaka Univ.) ED2009-206 SDM2009-203 Link to ES Tech. Rep. Archives: ED2009-206 SDM2009-203
Abstract (in Japanese) (See Japanese page) 
(in English) We have demonstrated logic gates based on complementary carbon nanotube field-effect transistors (CNT-FETs) with SiNx passivation films deposited by catalytic chemical vapor deposition. Carrier types in CNT-FETs were controlled by forming SiNx passivation film. Electrical measurements reveal that the p-type characteristics of CNT-FETs were converted to n-type after deposition of SiNx passivation films. Then, the n-type CNT-FETs with SiNx passivation films were reconverted to p-type by annealing in N2 atmosphere. As a consequence, the complementary voltage inverters comprising the p-type and n-type CNT-FETs with SiNx passivation film were demonstrated on the same SiO2 substrate by conventional photolithography and lift-off techniques. Moreover, static transfer and dynamic characteristics in the CNT-FET-based inverters were investigated, indicating that the gain of approximately three was achieved and that the device was switched properly at frequencies up to 100 Hz.
Keyword (in Japanese) (See Japanese page) 
(in English) Carbon nanotube / Field-Effect Transistor / CMOS inverter / Cat-CVD / / / /  
Reference Info. IEICE Tech. Rep., vol. 109, no. 422, ED2009-206, pp. 59-63, Feb. 2010.
Paper # ED2009-206 
Date of Issue 2010-02-15 (ED, SDM) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
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Download PDF ED2009-206 SDM2009-203 Link to ES Tech. Rep. Archives: ED2009-206 SDM2009-203

Conference Information
Committee ED SDM  
Conference Date 2010-02-22 - 2010-02-23 
Place (in Japanese) (See Japanese page) 
Place (in English) Okinawaken-Seinen-Kaikan 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Functional Nano Device and Related Technology 
Paper Information
Registration To ED 
Conference Code 2010-02-ED-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) CMOS inverters based on carbon nanotube field-effect transistors with SiNx passivation films 
Sub Title (in English)  
Keyword(1) Carbon nanotube  
Keyword(2) Field-Effect Transistor  
Keyword(3) CMOS inverter  
Keyword(4) Cat-CVD  
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1st Author's Name Takaomi Kishimoto  
1st Author's Affiliation The institute of scientific and industrial research, Osaka University (ISIR, Osaka Univ.)
2nd Author's Name Yasuhide Ohno  
2nd Author's Affiliation The institute of scientific and industrial research, Osaka University (ISIR, Osaka Univ.)
3rd Author's Name Kenzo Maehashi  
3rd Author's Affiliation The institute of scientific and industrial research, Osaka University (ISIR, Osaka Univ.)
4th Author's Name Koichi Inoue  
4th Author's Affiliation The institute of scientific and industrial research, Osaka University (ISIR, Osaka Univ.)
5th Author's Name Kazuhiko Matsumoto  
5th Author's Affiliation The institute of scientific and industrial research, Osaka University (ISIR, Osaka Univ.)
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Speaker Author-1 
Date Time 2010-02-23 10:10:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2009-206, SDM2009-203 
Volume (vol) vol.109 
Number (no) no.422(ED), no.423(SDM) 
Page pp.59-63 
#Pages
Date of Issue 2010-02-15 (ED, SDM) 


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