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Paper Abstract and Keywords
Presentation 2010-04-22 09:00
[Invited Talk] A Configurable SRAM with Constant-Negative-Level Write Buffer for Low Voltage Operation with 0.149μm2 Cell in 32nm High-k Metal Gate CMOS
Yuki Fujimura, Osamu Hirabayashi, Takahiko Sasaki, Azuma Suzuki, Atsushi Kawasumi, Yasuhisa Takeyama, Keiichi Kushida, Gou Fukano, Akira Katayama, Yusuke Niki, Tomoaki Yabe (Toshiba Corp.) ICD2010-1
Abstract (in Japanese) (See Japanese page) 
(in English) This paper presents a configurable SRAM for low voltage operation with Constant-Negative-Level Write Buffer (CNL-WB) and Level Programmable Wordline Driver for single supply operation(LPWD). CNL-WB is suitable for compilable SRAMs and it improves write margin by featuring an automatic bitline level adjustment for configuration range of four to 512 cells/bitline using a replica bitline technique. LPWD optimizes the tradeoff between disturb and write margin of a memory cell, realizing 60% shorter wordline rise time than that of the conventional design at 0.7V. The test chip has been fabricated in 32nm high-κ/metal gate CMOS technology with 0.149μm2 6T cell. Measurement results have demonstrated cell failure rate improvement by two orders of magnitude for array configuration range of 64 to 256 rows by 64 to 256 columns.
Keyword (in Japanese) (See Japanese page) 
(in English) SRAM / Low Voltage Operation / Configurable / Negative Bias / Replica / Wordline Driver / /  
Reference Info. IEICE Tech. Rep., vol. 110, no. 9, ICD2010-1, pp. 1-6, April 2010.
Paper # ICD2010-1 
Date of Issue 2010-04-15 (ICD) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee ICD  
Conference Date 2010-04-22 - 2010-04-23 
Place (in Japanese) (See Japanese page) 
Place (in English) Shonan Institute of Tech. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Memory Device Technologies 
Paper Information
Registration To ICD 
Conference Code 2010-04-ICD 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) A Configurable SRAM with Constant-Negative-Level Write Buffer for Low Voltage Operation with 0.149μm2 Cell in 32nm High-k Metal Gate CMOS 
Sub Title (in English)  
Keyword(1) SRAM  
Keyword(2) Low Voltage Operation  
Keyword(3) Configurable  
Keyword(4) Negative Bias  
Keyword(5) Replica  
Keyword(6) Wordline Driver  
Keyword(7)  
Keyword(8)  
1st Author's Name Yuki Fujimura  
1st Author's Affiliation Toshiba Corporation (Toshiba Corp.)
2nd Author's Name Osamu Hirabayashi  
2nd Author's Affiliation Toshiba Corporation (Toshiba Corp.)
3rd Author's Name Takahiko Sasaki  
3rd Author's Affiliation Toshiba Corporation (Toshiba Corp.)
4th Author's Name Azuma Suzuki  
4th Author's Affiliation Toshiba Corporation (Toshiba Corp.)
5th Author's Name Atsushi Kawasumi  
5th Author's Affiliation Toshiba Corporation (Toshiba Corp.)
6th Author's Name Yasuhisa Takeyama  
6th Author's Affiliation Toshiba Corporation (Toshiba Corp.)
7th Author's Name Keiichi Kushida  
7th Author's Affiliation Toshiba Corporation (Toshiba Corp.)
8th Author's Name Gou Fukano  
8th Author's Affiliation Toshiba Corporation (Toshiba Corp.)
9th Author's Name Akira Katayama  
9th Author's Affiliation Toshiba Corporation (Toshiba Corp.)
10th Author's Name Yusuke Niki  
10th Author's Affiliation Toshiba Corporation (Toshiba Corp.)
11th Author's Name Tomoaki Yabe  
11th Author's Affiliation Toshiba Corporation (Toshiba Corp.)
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Speaker Author-1 
Date Time 2010-04-22 09:00:00 
Presentation Time 50 minutes 
Registration for ICD 
Paper # ICD2010-1 
Volume (vol) vol.110 
Number (no) no.9 
Page pp.1-6 
#Pages 6 
Date of Issue 2010-04-15 (ICD) 

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