Paper Abstract and Keywords |
Presentation |
2010-06-17 13:00
Growth of InSb films on the V-grooved Si(001) substrate with InSb bi-layer Tatsuya Iwasugi, Sara Khamseh, Azusa Kadoda, Kimihiko Nakatani, Masayuki Mori, Koichi Maezawa (Univ. of Toyama) ED2010-33 Link to ES Tech. Rep. Archives: ED2010-33 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
We have reported that InSb films grown on a Si(111) substrate with InSb bi-layer rotate by 30° degree with respect to Si surface. The InSb films have good crystal quality and electric properties. However, Si(001) surface has mainly used to fabricate semiconductor devices. So, to realize the high quality InSb films on Si(001) is useful for semiconductor industry. If V-grooved (111) surfaces were prepared on the Si(001) substrate, high quality InSb films can be grown with the InSb bi-layer. In this paper, we report the growth of InSb films on V-grooved Si(001) substrate. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
V-grooved (111) surface / InSb bi-layer / / / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 110, no. 80, ED2010-33, pp. 1-4, June 2010. |
Paper # |
ED2010-33 |
Date of Issue |
2010-06-10 (ED) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
ED2010-33 Link to ES Tech. Rep. Archives: ED2010-33 |
Conference Information |
Committee |
ED |
Conference Date |
2010-06-17 - 2010-06-18 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
JAIST |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Process and device technology of semiconductors (surface, interface, reliability, etc.) |
Paper Information |
Registration To |
ED |
Conference Code |
2010-06-ED |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Growth of InSb films on the V-grooved Si(001) substrate with InSb bi-layer |
Sub Title (in English) |
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Keyword(1) |
V-grooved (111) surface |
Keyword(2) |
InSb bi-layer |
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1st Author's Name |
Tatsuya Iwasugi |
1st Author's Affiliation |
University of Toyama (Univ. of Toyama) |
2nd Author's Name |
Sara Khamseh |
2nd Author's Affiliation |
University of Toyama (Univ. of Toyama) |
3rd Author's Name |
Azusa Kadoda |
3rd Author's Affiliation |
University of Toyama (Univ. of Toyama) |
4th Author's Name |
Kimihiko Nakatani |
4th Author's Affiliation |
University of Toyama (Univ. of Toyama) |
5th Author's Name |
Masayuki Mori |
5th Author's Affiliation |
University of Toyama (Univ. of Toyama) |
6th Author's Name |
Koichi Maezawa |
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University of Toyama (Univ. of Toyama) |
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Speaker |
Author-1 |
Date Time |
2010-06-17 13:00:00 |
Presentation Time |
25 minutes |
Registration for |
ED |
Paper # |
ED2010-33 |
Volume (vol) |
vol.110 |
Number (no) |
no.80 |
Page |
pp.1-4 |
#Pages |
4 |
Date of Issue |
2010-06-10 (ED) |
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