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Paper Abstract and Keywords
Presentation 2010-06-17 13:00
Growth of InSb films on the V-grooved Si(001) substrate with InSb bi-layer
Tatsuya Iwasugi, Sara Khamseh, Azusa Kadoda, Kimihiko Nakatani, Masayuki Mori, Koichi Maezawa (Univ. of Toyama) ED2010-33
Abstract (in Japanese) (See Japanese page) 
(in English) We have reported that InSb films grown on a Si(111) substrate with InSb bi-layer rotate by 30° degree with respect to Si surface. The InSb films have good crystal quality and electric properties. However, Si(001) surface has mainly used to fabricate semiconductor devices. So, to realize the high quality InSb films on Si(001) is useful for semiconductor industry. If V-grooved (111) surfaces were prepared on the Si(001) substrate, high quality InSb films can be grown with the InSb bi-layer. In this paper, we report the growth of InSb films on V-grooved Si(001) substrate.
Keyword (in Japanese) (See Japanese page) 
(in English) V-grooved (111) surface / InSb bi-layer / / / / / /  
Reference Info. IEICE Tech. Rep., vol. 110, no. 80, ED2010-33, pp. 1-4, June 2010.
Paper # ED2010-33 
Date of Issue 2010-06-10 (ED) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2010-33

Conference Information
Committee ED  
Conference Date 2010-06-17 - 2010-06-18 
Place (in Japanese) (See Japanese page) 
Place (in English) JAIST 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Process and device technology of semiconductors (surface, interface, reliability, etc.) 
Paper Information
Registration To ED 
Conference Code 2010-06-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Growth of InSb films on the V-grooved Si(001) substrate with InSb bi-layer 
Sub Title (in English)  
Keyword(1) V-grooved (111) surface  
Keyword(2) InSb bi-layer  
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1st Author's Name Tatsuya Iwasugi  
1st Author's Affiliation University of Toyama (Univ. of Toyama)
2nd Author's Name Sara Khamseh  
2nd Author's Affiliation University of Toyama (Univ. of Toyama)
3rd Author's Name Azusa Kadoda  
3rd Author's Affiliation University of Toyama (Univ. of Toyama)
4th Author's Name Kimihiko Nakatani  
4th Author's Affiliation University of Toyama (Univ. of Toyama)
5th Author's Name Masayuki Mori  
5th Author's Affiliation University of Toyama (Univ. of Toyama)
6th Author's Name Koichi Maezawa  
6th Author's Affiliation University of Toyama (Univ. of Toyama)
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Speaker Author-1 
Date Time 2010-06-17 13:00:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2010-33 
Volume (vol) vol.110 
Number (no) no.80 
Page pp.1-4 
#Pages 4 
Date of Issue 2010-06-10 (ED) 

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