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Paper Abstract and Keywords
Presentation 2010-06-17 15:50
Effects of surface oxidation during device processing on surface barrier height of AlGaN/GaN HFETs
Masataka Higashiwaki (NICT/JST/UCSB), Srabanti Chowdhury, Brian L. Swenson, Umesh K. Mishra (UCSB) ED2010-39
Abstract (in Japanese) (See Japanese page) 
(in English) We investigated effects of surface oxidation by annealing during device process on AlGaN surface barrier height of AlGaN/GaN heterostructures by Hall measurement and x-ray photoelectron spectroscopy (XPS).
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From AlGaN thickness dependence of two-dimensional electron gas density and XPS analysis, a constant surface barrier height regardless of AlGaN thickness was obtained for the samples annealed at 800{${\rm {}^{\circ}\mbox{C}}$}.
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On the other hand, the samples annealed at 400{${\rm {}^{\circ}\mbox{C}}$} showed a proportional increase in the height with the thickness.
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Moreover, XPS peak intensity related to Al--O bonding significantly increased after annealing at 800{${\rm {}^{\circ}\mbox{C}}$} regardless of atmosphere and saturated in a short time, even though it changed little after annealing at 400{${\rm {}^{\circ}\mbox{C}}$} compared with before annealing.
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We consider from the experimental results and their correlation that Al oxide structure formed on the AlGaN surface significantly affects energy distribution and density of surface donors.
Keyword (in Japanese) (See Japanese page) 
(in English) GaN / AlGaN / surface barrier / x-ray photoelectron spectroscopy / / / /  
Reference Info. IEICE Tech. Rep., vol. 110, no. 80, ED2010-39, pp. 31-35, June 2010.
Paper # ED2010-39 
Date of Issue 2010-06-10 (ED) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee ED  
Conference Date 2010-06-17 - 2010-06-18 
Place (in Japanese) (See Japanese page) 
Place (in English) JAIST 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Process and device technology of semiconductors (surface, interface, reliability, etc.) 
Paper Information
Registration To ED 
Conference Code 2010-06-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Effects of surface oxidation during device processing on surface barrier height of AlGaN/GaN HFETs 
Sub Title (in English)  
Keyword(1) GaN  
Keyword(2) AlGaN  
Keyword(3) surface barrier  
Keyword(4) x-ray photoelectron spectroscopy  
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1st Author's Name Masataka Higashiwaki  
1st Author's Affiliation National Institute of Information and Communications Technology/JST PRESTO/University of California, Santa Barbara (NICT/JST/UCSB)
2nd Author's Name Srabanti Chowdhury  
2nd Author's Affiliation University of California, Santa Barbara (UCSB)
3rd Author's Name Brian L. Swenson  
3rd Author's Affiliation University of California, Santa Barbara (UCSB)
4th Author's Name Umesh K. Mishra  
4th Author's Affiliation University of California, Santa Barbara (UCSB)
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Speaker Author-1 
Date Time 2010-06-17 15:50:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2010-39 
Volume (vol) vol.110 
Number (no) no.80 
Page pp.31-35 
#Pages 5 
Date of Issue 2010-06-10 (ED) 

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