Paper Abstract and Keywords |
Presentation |
2010-06-17 15:50
Effects of surface oxidation during device processing on surface barrier height of AlGaN/GaN HFETs Masataka Higashiwaki (NICT/JST/UCSB), Srabanti Chowdhury, Brian L. Swenson, Umesh K. Mishra (UCSB) ED2010-39 Link to ES Tech. Rep. Archives: ED2010-39 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
We investigated effects of surface oxidation by annealing during device process on AlGaN surface barrier height of AlGaN/GaN heterostructures by Hall measurement and x-ray photoelectron spectroscopy (XPS).
%
From AlGaN thickness dependence of two-dimensional electron gas density and XPS analysis, a constant surface barrier height regardless of AlGaN thickness was obtained for the samples annealed at 800{${\rm {}^{\circ}\mbox{C}}$}.
%
On the other hand, the samples annealed at 400{${\rm {}^{\circ}\mbox{C}}$} showed a proportional increase in the height with the thickness.
%
Moreover, XPS peak intensity related to Al--O bonding significantly increased after annealing at 800{${\rm {}^{\circ}\mbox{C}}$} regardless of atmosphere and saturated in a short time, even though it changed little after annealing at 400{${\rm {}^{\circ}\mbox{C}}$} compared with before annealing.
%
We consider from the experimental results and their correlation that Al oxide structure formed on the AlGaN surface significantly affects energy distribution and density of surface donors. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
GaN / AlGaN / surface barrier / x-ray photoelectron spectroscopy / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 110, no. 80, ED2010-39, pp. 31-35, June 2010. |
Paper # |
ED2010-39 |
Date of Issue |
2010-06-10 (ED) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
ED2010-39 Link to ES Tech. Rep. Archives: ED2010-39 |
Conference Information |
Committee |
ED |
Conference Date |
2010-06-17 - 2010-06-18 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
JAIST |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Process and device technology of semiconductors (surface, interface, reliability, etc.) |
Paper Information |
Registration To |
ED |
Conference Code |
2010-06-ED |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Effects of surface oxidation during device processing on surface barrier height of AlGaN/GaN HFETs |
Sub Title (in English) |
|
Keyword(1) |
GaN |
Keyword(2) |
AlGaN |
Keyword(3) |
surface barrier |
Keyword(4) |
x-ray photoelectron spectroscopy |
Keyword(5) |
|
Keyword(6) |
|
Keyword(7) |
|
Keyword(8) |
|
1st Author's Name |
Masataka Higashiwaki |
1st Author's Affiliation |
National Institute of Information and Communications Technology/JST PRESTO/University of California, Santa Barbara (NICT/JST/UCSB) |
2nd Author's Name |
Srabanti Chowdhury |
2nd Author's Affiliation |
University of California, Santa Barbara (UCSB) |
3rd Author's Name |
Brian L. Swenson |
3rd Author's Affiliation |
University of California, Santa Barbara (UCSB) |
4th Author's Name |
Umesh K. Mishra |
4th Author's Affiliation |
University of California, Santa Barbara (UCSB) |
5th Author's Name |
|
5th Author's Affiliation |
() |
6th Author's Name |
|
6th Author's Affiliation |
() |
7th Author's Name |
|
7th Author's Affiliation |
() |
8th Author's Name |
|
8th Author's Affiliation |
() |
9th Author's Name |
|
9th Author's Affiliation |
() |
10th Author's Name |
|
10th Author's Affiliation |
() |
11th Author's Name |
|
11th Author's Affiliation |
() |
12th Author's Name |
|
12th Author's Affiliation |
() |
13th Author's Name |
|
13th Author's Affiliation |
() |
14th Author's Name |
|
14th Author's Affiliation |
() |
15th Author's Name |
|
15th Author's Affiliation |
() |
16th Author's Name |
|
16th Author's Affiliation |
() |
17th Author's Name |
|
17th Author's Affiliation |
() |
18th Author's Name |
|
18th Author's Affiliation |
() |
19th Author's Name |
|
19th Author's Affiliation |
() |
20th Author's Name |
|
20th Author's Affiliation |
() |
Speaker |
Author-1 |
Date Time |
2010-06-17 15:50:00 |
Presentation Time |
25 minutes |
Registration for |
ED |
Paper # |
ED2010-39 |
Volume (vol) |
vol.110 |
Number (no) |
no.80 |
Page |
pp.31-35 |
#Pages |
5 |
Date of Issue |
2010-06-10 (ED) |
|