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Paper Abstract and Keywords
Presentation 2010-06-17 15:15
Fabrication of high-frequency and high-power AlGaN/GaN HEMTs
Yoshimi Yamashita, Issei Watanabe, Akira Endoh, Nobumitsu Hirose, Toshiaki Matsui (NICT), Takashi Mimura (NICT/Fujitsu lab.) ED2010-38
Abstract (in Japanese) (See Japanese page) 
(in English) High-power AlGaN/GaN high electron mobility transistors (HEMTs) are the most promising devices for future high-speed and long-range wireless communications to transmit large amount of data; this is because of these transistors can operate at millimeter-wave frequency band (30-300 GHz). In this contribution, we improved radio frequency (RF) and output power characteristics of the AlGaN/GaN MIS-HEMTs with SiN/SiO2/SiN triple-layer insulators by decreasing gate length (Lg), source-drain spacing (Lsd) and thickness of AlGaN barrier layer. As the Lsd decreasing from 2.0 μm to 1.0 μm, the drain current (Id), transconductance (gm), cutoff frequency (fT) and maximum oscillation frequency (fmax) were increased, and we achieved high fT of 188 GHz and fmax of 173 GHz for the 45-nm-gate MIS-HEMT. Furthermore, we also obtained high gain of 5.1 dB and output power density of 182 mW/mm at a frequency of 85 GHz for the MIS-HEMT with 80-nm-long and 100-μm-width gates.
Keyword (in Japanese) (See Japanese page) 
(in English) AlGaN/GaN MIS-HEMT / SiN/SiO2/SiN triple-layer insulators / RF and output power characteristic / / / / /  
Reference Info. IEICE Tech. Rep., vol. 110, no. 80, ED2010-38, pp. 25-30, June 2010.
Paper # ED2010-38 
Date of Issue 2010-06-10 (ED) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2010-38

Conference Information
Committee ED  
Conference Date 2010-06-17 - 2010-06-18 
Place (in Japanese) (See Japanese page) 
Place (in English) JAIST 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Process and device technology of semiconductors (surface, interface, reliability, etc.) 
Paper Information
Registration To ED 
Conference Code 2010-06-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Fabrication of high-frequency and high-power AlGaN/GaN HEMTs 
Sub Title (in English)  
Keyword(1) AlGaN/GaN MIS-HEMT  
Keyword(2) SiN/SiO2/SiN triple-layer insulators  
Keyword(3) RF and output power characteristic  
Keyword(4)  
Keyword(5)  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Yoshimi Yamashita  
1st Author's Affiliation National Institute of Information and Communicactions Technology (NICT)
2nd Author's Name Issei Watanabe  
2nd Author's Affiliation National Institute of Information and Communicactions Technology (NICT)
3rd Author's Name Akira Endoh  
3rd Author's Affiliation National Institute of Information and Communicactions Technology (NICT)
4th Author's Name Nobumitsu Hirose  
4th Author's Affiliation National Institute of Information and Communicactions Technology (NICT)
5th Author's Name Toshiaki Matsui  
5th Author's Affiliation National Institute of Information and Communicactions Technology (NICT)
6th Author's Name Takashi Mimura  
6th Author's Affiliation National Institute of Information and Communicactions Technology/Fujitsu Laboratories Limited (NICT/Fujitsu lab.)
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Speaker Author-1 
Date Time 2010-06-17 15:15:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2010-38 
Volume (vol) vol.110 
Number (no) no.80 
Page pp.25-30 
#Pages 6 
Date of Issue 2010-06-10 (ED) 

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