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| Presentation | 2010-06-18 11:25 Removal of Cu contaminants on silicon material surfaces by defect passivation etchless cleaning solutions Masao Takahashi, Yuko Higashi, Hiroaki Narita, Hitoo Iwasa, Hikaru Kobayashi (Osaka Univ/JST)  ED2010-45 Link to ES Tech. Rep. Archives: ED2010-45 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Dilute HCN aqueous solutions with a concentration of 1ppm can remove Cu contaminants of 10^{12}~10^{13} atomc/cm^{2} concentrations on SiO_{2} surfaces to a concentration below ~3×10^{9} atoms/cm^{2} taking 5 min. The high cleaning ability of HCN aqueous solutions is attributable to the high reactivity of CN^{－} ions to form metal-cyano complex ions with a high stability constant in aqueous solutions, leading to prevention of re-adsorption. It has been found, from XANES spectra and the incidence angle dependence of total reflection X-ray fluorescence intensity, that Cu contaminants with a 1×10^{10} atoms/cm^{2} concentration resemble to Cu_{2}O and Cu(OH)_{2}. In the case of bare silicon substrates, Cu contaminants can be removed without etching and roughening surfaces by adjusting pH of HCN aqueous solutions below 9. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Cleaning / Cyanide method / Hydrogen cyanide / Surfaces / Chemical state / XANES / TXRF / | |
| Reference Info. | IEICE Tech. Rep., vol. 110, no. 80, ED2010-45, pp. 63-68, June 2010. | |
| Paper # | ED2010-45 | |
| Date of Issue | 2010-06-10 (ED) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2010-45 Link to ES Tech. Rep. Archives: ED2010-45 |
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| Conference Information | |
| Committee | ED |
| Conference Date | 2010-06-17 - 2010-06-18 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | JAIST |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Process and device technology of semiconductors (surface, interface, reliability, etc.) |
| Paper Information | |
| Registration To | ED |
| Conference Code | 2010-06-ED |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Removal of Cu contaminants on silicon material surfaces by defect passivation etchless cleaning solutions |
| Sub Title (in English) | |
| Keyword(1) | Cleaning |
| Keyword(2) | Cyanide method |
| Keyword(3) | Hydrogen cyanide |
| Keyword(4) | Surfaces |
| Keyword(5) | Chemical state |
| Keyword(6) | XANES |
| Keyword(7) | TXRF |
| Keyword(8) | |
| 1st Author's Name | Masao Takahashi |
| 1st Author's Affiliation | Osaka University/CREST-JST (Osaka Univ/JST) |
| 2nd Author's Name | Yuko Higashi |
| 2nd Author's Affiliation | Osaka University/CREST-JST (Osaka Univ/JST) |
| 3rd Author's Name | Hiroaki Narita |
| 3rd Author's Affiliation | Osaka University/CREST-JST (Osaka Univ/JST) |
| 4th Author's Name | Hitoo Iwasa |
| 4th Author's Affiliation | Osaka University/CREST-JST (Osaka Univ/JST) |
| 5th Author's Name | Hikaru Kobayashi |
| 5th Author's Affiliation | Osaka University/CREST-JST (Osaka Univ/JST) |
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| Speaker | Author-1 |
| Date Time | 2010-06-18 11:25:00 |
| Presentation Time | 25 minutes |
| Registration for | ED |
| Paper # | ED2010-45 |
| Volume (vol) | vol.110 |
| Number (no) | no.80 |
| Page | pp.63-68 |
| #Pages | 6 |
| Date of Issue | 2010-06-10 (ED) |
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